Organization of the TCAD research group
ACADEMIA(MEMS modeling and CAD tools) (DARPA) |
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Faculty/Staff
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The field of MEMS (micro-electro-mechanical systems) is diverse in both applications domains and CAD tools required for analysis. This project cross-cuts other groups at Stanford in materials science (Bravman) and MEMS applications (Kovacs) along with the core CAD activities in the Dutton group. The focus of the project is to develop tools and methodology that capture fabrication details that directly affect behavior at the subsytems level. Current tools activities include: geometry modeling, process modeling (emphasis on materials and stress effects), gridding in support of FEM analysis and multi-physics behavior modeling (emphasis on coupled electrical and mechanical dynamic simulation). | ||
Students |
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PARASCOPE (scalable computing for TCAD) (DARPA) |
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Staff |
The prototyping of IC technology and especially for problems with complex physics, advanced processing and large 3D problems, requires new tools and numerical methods---both computationally and for visualization of complex results. This project brings together a heterogenous set of TCAD tools (ALAMODE and PROPHET) within the context of shared parallel computational resources (i.e. the "para" in ParaSCOPE) and in support of internet use and visualization. Advances in rapid prototyping of new physical models, applications to leading edge IC technology development (and characterization) as well as a range of supporting software issues are being pursued. | ||
Students |
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Computational Prototyping for 21st Century Semiconductors(DARPA) |
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Staff |
Expected Impact:
Over the history of the semiconductor industry, most technological
advances came from industrial research laboratories. Those laboratories that
still exist in industry are now focused on the near term demands of a
highly competitive marketplace. We propose, within the next 5 years,
to demonstrate a fundamentally new capability to perform the research
needed to assure a continuing flow of new technology to the semiconductor
industry in the 21st century. We believe that this objective can be
accomplished by bringing about two paradym shifts:
We anticipate that we can achieve these results for two reasons:
We are therefore challenged to begin the construction of a bold new approach to research which will invent the semiconductor technology of the next century. |
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Students |
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Computational Electronics(NCCE) (NSF) (DARPA) |
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Staff |
This page is still under construction. Research Description to be provided soon. | ||
Students |
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PISCES(SRC) |
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Staff |
There are increasing demands on devices and circuits at the periphery of ICs due to reliabilty issues such as latchup, substrate noise and electrostatic discharge (ESD). All of these problems require modeling of distributed effects inside the substrate and careful consideration of the boundary conditions and lumped circuit elements that represent both the circuit schematics as well as parasitic effect. This project seeks to apply advanced 2D and 3D device modeling, including mixed-level circuit/device as well as electrical/thermal simulations, to characterize ESD and support innovations that help prevent it. This project is partially supported by SRC and cross-cuts Mechanical Engineering (Goodson) and Electrical Engineering (Dutton). | ||
Students(SRC Fellowship) |
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SUPREM(SRC) |
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Staff |
This page is still under construction. Research Description to be provided soon. | ||
Students |
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last update: June 10, 1998
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