The importance of CMOS technology is increasing in RF design world because of the promise of integrating the whole system on a single chip. As recent work has demonstrated the viability of CMOS low noise amplifiers, RF frequency designs are increasingly taking advantage of CMOS technology. While complete broad band noise characterization and accurate noise modeling of MOSFET are indispensible for future circuit design, the excess thermal noise behavior in short channel MOSFET devices is not well investigated yet. The goal of this project is developing a circuit-level thermal noise model from microscopic anaysis using TCAD tools.

Progress:

Numerical noise simulation techniques, based on the Langevin Approach and the Impedance Field Method, has been studied. The implementation into PROPHET is in progress.

Publications & Presentations this Quarter: None

Trips: None