Themes of TCAD research

Computational Prototyping

Task 1: Atomic Level Modeling
Task 2: Model Hierarchy
Task 3: National Research Enterprise
Task 4: Demonstration Projects

Process Modeling

SPEEDIE: Physical simulation of etching and deposition.
SPRINT-CAD: Networked TCAD using shared parallel computers
Accurate physical models for both silicon and GaAs technologies are essential in achieving predictive TCAD. There are a major set of research projects in this area, primarily under support from SRC and ARPA. Mike Deal and Peter Griffin are the Research Associates.

Parallel Computing

SPRINT-CAD: Networked TCAD using shared parallel computers
ParaSCOPE: Parallel shared computational prototyping environment
Adaptive FEM: Adaptive parallel finite-element method for semiconductor simulation

Computational Electronics

National Center for Computational Electronics

Virtual Factory

The concepts of modeling the equipment, information and material flow and overall cost structure of IC fabrication facilities now and for the 21st century is a very bold research theme. Again, the research support has come primarily from SRC and ARPA. Krishna Saraswat is the main faculty contact.