Examples

This section contains several examples showing the use of SUPREM-IV.GS. The first nine examples are from the pre-gallium arsenide version of the program and show silicon processing exclusively. However, these examples are still useful for users interested in GaAs processing as they exploit many of the program's features that are common to all aspects of semiconductor process simulation. The next eight examples, examples 10 through 17, concentrate on GaAs process simulation. Only those commands that are unique to GaAs simulation are discussed. The last example, example 18, shows the field oxidation of the current BiCMOS process at Stanford's Center for Integrated Systems.

  1. Boron Anneal - 1D
  2. Boron OED - 1D
  3. OED Time
  4. Boron OED - 2D
  5. LDD Cross Section
  6. One Dimensional Oxide Growth
  7. Fully Recessed Oxide Growth
  8. Shear Stress
  9. Stress Dependent Oxidation
  10. GaAs MESFET Gate Simulation - 1D
  11. GaAs Simulation - 2D
  12. Dopant Activation Model Example
  13. Implanted and Annealed Beryllium
  14. Grown-in and Annealed Beryllium
  15. Annealing An Implant From Measured (SIMS) Data
  16. Two.Dim Diffusion With File Input Interstitials
  17. Full.Coupled Diffusion
  18. CIS BiCMOS LOCOS Simulation