Implanted and Annealed Beryllium

DESCRIPTION

Examples 13, 14, and 15 illustrate the differences in using implanted vs. grown-in dopants, and how it effects the diffusivity values used. In Example 13, beryllium is implanted in GaAs, and the structure is annealed. The input file for the simulation is in the "examples/exam13" directory, in the file example13.in. The as-implanted and diffused beryllium profiles are shown in Figure 1. The implanted diffusion coefficients are used since there is an "implant beryllium ..." statement.

option quiet
set echo

mode one.dim
line x loc=0.0 spacing=0.01 tag=top
line x loc=1.0 spacing=0.01
line x loc=20 spacing=0.25 tag=bottom

region gaas       xlo=top  xhi=bottom
boundary exposed  xlo=top  xhi=top
boundary backside xlo=bottom xhi=bottom

init carbon conc=1e15
implant beryllium dose=1e14 energy=100 pearson

deposit nitride thick=.3

    select z=log10(beryllium)
    plot.1d x.min=0 x.ma=2 y.mi=14 y.max=20 line.type=4

method fermi init=1e-5
method full.fac
diffuse time=15 temp=800 argon
    select z=log10(beryllium)
    plot.1d x.mi=0 x.ma=2 y.mi=14 y.ma=20 cle=f axi=f line.typ=2

quit