Annealing An Implant From Measured (SIMS) Data

DESCRIPTION

In this example, the "implanted" diffusivities are used, even though there is no implant statement. The input file for the simulation is in the "examples/exam15" directory, in the file example15.in.

option quiet
set echo

mode one.dim
line x loc=0.0 spacing=0.01 tag=top
line x loc=1.0 spacing=0.01
line x loc=20 spacing=0.25 tag=bottom

region gaas      xlo=top  xhi=bottom
boundary exposed xlo=top  xhi=top
boundary backside xlo=bottom xhi=bottom

init carbon conc=1e15
profile infile=be1 beryllium
implant beryllium dose=1e1 energy=100 pearson
deposit nitride thick=.3
    select z=log10(beryllium)	
    plot.1d x.min=0 x.ma=2 y.mi=14 y.max=20 line.type=4

method fermi init=1e-5
method full.fac
diffuse time=15 temp=800 argon 
    select z=log10(beryllium)	
    plot.1d x.min=0 x.ma=2 y.mi=14 y.max=20 cle=f axi=f line.type=2

quit

The as-implanted profile obtained from SIMS measurements is input from a file ("be1") by using the profile statement:

profile infile=be1 beryllium

File be1 contains the x concentration values for the as-implanted beryllium profile. In order to use the "implanted" diffusivities even though there is no implant statement a "dummy" implant is done,

implant beryllium dose=1e1 energy=100 pearson

in which a very low dose beryllium implant is used. As shown in Figure 1, the extent of diffusion is comparable to that of Example 13, and much more than in Example 14, indicating the higher "implanted" diffusivity is used.