GaAs Simulation - 2D

DESCRIPTION

This shows how one would do a 2D GaAs simulation. A 2D grid is set up, and silicon and beryllium are implanted in the source, drain and channel regions. Then the doping contours are plotted for the designated concentration levels in Figure 1. In this example, only one half of the structure is simulated, then mirrored before the result is plotted, in order to speed up simulation time. The input file for the simulation is in the "examples/exam11" directory, in the file example11.in.

option quiet
set echo

line x loc = 0.0 tag=left   spacing = 0.5
line x loc = 0.50           spacing = 0.5
line x loc = 4.00           spacing = 0.5
line x loc = 4.10           spacing = 0.1
line x loc = 4.20           spacing = 0.05
line x loc = 4.50           spacing = 0.05
line x loc = 5.00 tag=right spacing = 0.05

line y loc=0.0 tag=top      spacing=0.03
line y loc=0.3              spacing=0.03
line y loc=1.0             spacing=0.1
line y loc=3.0  tag=bottom  spacing=0.3

region gaas  xlo=left  xhi=right  ylo=top  yhi=bottom
boundary exposed xlo=left xhi=right ylo=top yhi=top
boundary backside xlo=left xhi=right ylo=bottom yhi=-bottom
init isilicon conc=3e15

deposit nitride thick=1.0
etch nitride start x=5 y=0.0
etch continue x=5 y=-1.10
etch continue x=4.5 y=-1.10
etch done x=4.5 y=0.0

implant isilicon dose=1.75e12 energy=75 pearson
implant beryllium dose=1e13 energy=100 pearson

etch nitride start x=4.5 y=0.0
etch continue x=4.5 y=-1.10
etch continue x=0 y=-1.10
etch done x=0 y=0.0

deposit nitride thick=1.0
etch nitride start x=4.5 y=0.0
etch continue x=4.5 y=-1.10
etch continue x=0.0 y=-1.10
etch done x=0.0 y=0.0

implant isilicon dose=1e13 energy=100.0 pearson

etch nitride start x=4.5 y=0.0
etch continue x=4.5 y=-1.10
etch continue x=5.0 y=-1.10
etch done x=5.0 y=0.0

deposit nitride thick=.05

structure mirror right

plot.2d bound fill x.min=4.0 x.max=6 y.max=1.6
select z=log10(isilicon)
foreach v (15. to 18.5 step 0.5)
    contour val=v line.type=2
end

plot.2d bound fill x.min=4 x.max=6 y.max=1.6 cle=f axi=f
select z=log10(beryllium)
foreach v (16.5 to 17.0 step .5)
    contour val=v line.type=4
end

quit