SPRINTCAD QUARTERLY SUMMARY

October 1 - December 31, 1995


ORGANIZATION:

Stanford University

SUB-CONTRACTORS:

none

PRINCIPAL INVESTIGATORS:


Robert W. Dutton, dutton@gloworm.Stanford.EDU, (650) 723-4138
Kincho H. Law, law@cive.Stanford.EDU, (650) 725-3154
Krishna Sa raswat, saraswat@ee.Stanford.EDU, (650) 725-3610
Peter Pinsky, pinsky@ce.Stanford.EDU

PROJECT LEADER

Edwin C. Kan, kan@gloworm.Stanford.EDU, (415) 723-9796


TITLE OF EFFORT:

"SPRINT-CAD"---Industry-Networked TCAD using Shared Parallel Computers

RELATED INFORMATION:

The URL for Stanford TCAD projects is: http://www-tcad.stanford.edu">

OBJECTIVE:

First-time capabilities to bridge solid modeling, FEM-based parallel computation of fabrication processes and electrical analysis of the resulting IC structures will be developed. Models needed to represent diffusion, etching, deposition, oxidation and stress analysis resulting from a sequence of process steps necessary in the creation of electrical devices will be developed. This effort will provide a radically new HPC framework for technology-based 3D process/device modeling as well as realistic benchmarks to test HPC architectures and software.

APPROACH:

We will build, integrate and test TCAD modules based on an object-oriented approach that both develops and uses information models in support of CFI-based standards. The modules and software engineering methodology will be designed specifically to exploit parallel computers and library components. The 3D process simulation modules will utilize HPC platforms and provide new functional capabilities for "computational prototyping" of the following key technology fabrication steps:
  1. deposition/etching module---of special interest are CVD and plasma assisted processes that result in high aspect ratio structures such as trenches and filling/planarization of structures for metal interconnects. Algorithmic work focuses on geometric manipulations and surface evolution.
  2. thermal/stress analysis module---that can solve nonlinear constitutive models for key process steps involving growth of dielectric layers and impurity redistribution as well as the resulting stress fields. Advanced formulations for finite elements are being developed that support: parallel computation, adaptive gridding and domain decomposition.

PROGRESS:

The 3D geometry/field server based on the minimal SWR specification now provides two boundary-movement schemes: the Huygens' principle which finds the isometric envelope and the mass conservation principle which satisfies the physical entropy condition. For implementation using the level-set method, these two principles only differ in local modification of the level-set function and can share most of the other functions. User selection of these principles will be passed through generic attributes of the base class, similar to the other user-specified parameters and flags.

The level-set boundary movement method has been calibrated in the etching/deposition simulator SPEEDIE 3.0 for a wide range of processes including Low Pressure Chemical Vapor Deposition (LPCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), Physical Vapor Deposition (PVD), and Self-Aligned Contacts (SAC) by matching with the 2D cross section of the SEM pictures, and stringer formation by qualitatively comparing the 3D SEM pictures. Elimination of non-physical, rule-base boundary movement has made calibration much easier since numerical errors can be better controlled. Important physical features, such as polymer accumulation in high density plasma oxide etching (HDPOE) and facet formation in the sputtering etchback, are successfully demonstrated within the new SPEEDIE.

The finite element discretization for the diffusion equation may encounter numerical undershoot problems, where concentration becomes negative, if the mass matrix, even though positive-definite, contains negative elements operating on very large concentration gradients. Since negative concentration is not only unphysical, but also may cause numerical problems in reaction and recombination terms. To guarantee that concentration remains positive for all time steps, the discretization has to satisfy the maximum principle. We have analytically derived the criteria for the maximum principle in the diffusion equation in 1D, which can be extended to 2D and 3D. Also, to accelerate convergence rate in the initial phase of nonlinear Newton iterations, damped Newton methods with different line search schemes are implemented to avoid numerical overshoot. For the new physical models defined in ALAMODE, the Jacobian matrix may be very stiff, such as in the case of the five-species model where dopants and dopant-defect pairs have very different scales of transport coefficients, and the damped Newton scheme can help the overall convergence of the numerical system.

The functions to transfer data representations between SUPREM-ALAMODE and CAMINO are implemented. 3D multi-region test structures have been validated with the fermi diffusion model. The Oct-tree based tetrahedral mesh contains anisotropic refinement capabilities and can take general boundary-representation geometry. A hierarchy of error estimators, including implicit/explicit and inter-/intra-element methods, are formulated and partially connected to ALAMODE. Error fields for explicit inter-/intra-element contributions are verified for the diffusion equation. Along with the error estimator implementation, access to strong forms of operators are built, which will later be extended to Galerkin-Least-Square (GLS) implementation.

In collaboration with Dr. B. Froehlich of the Center for Integrated Systems of Stanford University, a prototype of interactive visualization of 3D geometry objects generated by VIP-3D has been implemented on the SGI virtual reality systems. Computer-tracked stereo glasses and gloves can allow users to view objects from different angles and distances, move objects around and investigate flow lines by injecting particles.

RECENT ACCOMPLISHMENTS:

FY-`96 PLANS:

TECHNOLOGY TRANSITION:

Drs. Paco Leon and Martin Giles from Intel TCAD group were invited to our weekly SPRINT-CAD meeting on Oct. 18, 1995. The focus of discussions has been on how to transfer TCAD developmental results from Stanford to industry and research labs. The traditional method of transferring software from university to vendors and then to users may not be appropriate owing to: 1) the new SPRINT-CAD modules are flexible in physical definition and,therefore, users can switch models and parameters easily, 2) the new modules are developed within an open simulation framework, and heterogeneous tools can run under the same environment and 3) the turn-around time from model and algorithm development to vendor implementation is too long. University, research labs, vendors and industry users need to adapt their roles with the new software development paradigm and innovative information communication.

Edwin C. Kan
kan@gloworm.stanford.edu
201 AEL, Stanford University, Stanford, CA 94305
Office: (415)723-9796
Fax: (415)725-7731

Date prepared: 1/27/96