SPRINTCAD QUARTERLY SUMMARY

October 1 - December 31, 1994


ORGANIZATION:

Stanford University

SUBCONTRACTORS:

none

PRINCIPAL INVESTIGATORS:

Robert W. Dutton, dutton@gloworm.Stanford.EDU, (650) 723-4138
Kincho H. Law, law@cive.Stanford.EDU, (650) 725-3154
Krishna Saraswat, saraswat@ee.Stanford.EDU, (650) 725-3610
Peter Pinsky, pinsky@ce.Stanford.EDU (650) 723-9327

PROJECT LEADER

Edwin C. Kan, kan@gloworm.Stanford.EDU, (415) 723-9796


TITLE OF EFFORT:

"SPRINT-CAD"---Industry-Networked TCAD using Shared Parallel Computers

RELATED INFORMATION:

The URL for Stanford TCAD projects is: http://www-tcad.stanford.edu

OBJECTIVE:

First-time capabilities to bridge solid modeling, FEM-based parallel computation of fabrication processes and electrical analysis of the resulting IC structures will be developed. Models needed to represent diffusion, etching, deposition, oxidation and stress analysis resulting from a sequence of process steps necessary in the creation of electrical devices will be developed. This effort will provide a radically new HPC framework for technology-based 3D process/device modeling as well as realistic benchmarks to test HPC architectures and software.

APPROACH:

We will build, integrate and test TCAD modules based on an object-oriented approach that both develops and uses information models in support of CFI-based standards. The modules and software engineering methodology will be designed specifically to exploit parallel computers and library components. The 3D process simulation modules will utilize HPC platforms and provide new functional capabilities for "computational prototyping" of the following key technology fabrication steps:
  1. deposition/etching module---of special interest are CVD and plasma assisted processes that result in high aspect ratio structures such as trenches and filling/planarization of structures for metal interconnects. Algorithmic work focuses on geometric manipulations and surface evolution.
  2. thermal/stress analysis module---that can solve nonlinear constitutive models for key process steps involving growth of dielectric layers and impurity redistribution as well as the resulting stress fields. Advanced formulations for finite elements are being developed that support: parallel computation, adaptive gridding and domain decomposition.

PROGRESS:

Solid geometry modeling can provide essential communication between volume-mesh-based and surface-mesh-based simulation tools by the consistent geometry representation. Also, by various geometry manipulations, it can fast prototype 3D structures when only 1D and 2D simulation or measurement results are available for certain process. The geometry modeling utility VIP 3D has been implemented using the ACIS geometry engine and can be accessed through a new minimal SWR specification. The 3D geometry utility has been connected with FOREST 2D field server, and the diffusion and oxidation (SUPREM) and the etching and deposition (SPEEDIE) tools have been connected. The connection to Stanford's 3D field server CAMINO is under way. The 3D meshing capabilities in CAMINO have been improved to robustly include multi-regions. For efficient device simulation, the anisotropic weight in oct-tree based meshing has been investigated.

A new constitutive model for oxidation that considers finite deformation as well as visco-elasticity has been derived. The finite element formulation is thermodynamically consistent and numerically stable. This constitutive model has been tested in the FEAP (finite element analysis program) environment and the elastic and viscous behaviors in the asymptotic limit have been verified for correctness and stability.

An object-oriented information model has been implemented to support FEM formulation and solution of general systems of PDEs. Abstract classes of field element integration and interpolation, operators for field-dependent constitutive models, recombination models, and diffusion, direct and iterative sparse linear solvers and flexible time-stepping schemes have been implemented and validated with a Poisson solver and several 2D nonlinear diffusion examples including segregation effects. Hooks to Suprem IV structure files have been provided for both validation and benchmarking purposes.

Physical modeling of etching/deposition based on Hamilton-Jacobi equations has been demonstrated in 2D SPEEDIE. The surface evolution based on the string model has been connected to the server-based SUPREM OO7 architecture. A minimal SWR specification for the surface mesh server has been defined from our experience with an integrated example containing all process modeling steps. 2D Modeling of anisotropic etch for deep trench technology has been successfully demonstrated. Calibration with SEM measurements has been performed to determine various parameters (such as sticking coefficients). 3D SPEEDIE implementation and demonstration examples have been examined.

RECENT ACCOMPLISHMENTS:

FY-`95 PLANS:

TECHNOLOGY TRANSITION:

At a SEMATECH sponsored workshop held in Santa Clara during November, 1994 the member companies did not support proposed efforts in further development of the SWR 2.0. As a result the Stanford team in this project is now working directly with partners such as IBM, ATT and Intel in the development and testing of a "minimal" SWR that will provide the functionality needed to complete the SPRINT-CAD project and to transition it into applications that leverage directly from the industrial partnerships that will ultimately be the end users. The further development and use of the 2D FOREST server will be carried out in collaboration with SRC and several partners such as National Semiconductor and Motorola.

The object-oriented PDE solver has direct relevance in creating a new module for process simulation that can be linked into the SUPREM OO7 architecture being developed under partial support from SRC. This architecture and the incorporation of other existing 2D tools such as SUPREM and SPEEDIE has been demonstrated at the International Electron Devices Meeting (IEDM) as discussed below. This demonstration and through industrial interactions in preparation for an SRC industrial review to be held in February, 1995 the path for technology transition for the Dial-an-Operator module will be discussed.

SIGNIFICANT EVENTS:

STANFORD DEMONSTRATES NEW SERVER-BASED ARCHITECTURE FOR SUPREM.

At the International Electron Devices Meeting (IEDM) held in San Francisco during December, 1994 the Stanford SPRINT-CAD group demonstrated the first prototype version of the Dial-an-Operator module working in the context of a new architecture for the well-known SUPREM process simulation tool. The agent-based process simulation environment, now called OO7 to reflect the object-oriented approach, supports a heterogeneous integration of tools. Shown at the demonstration was inter-operability between the established SUPREM 4GS and SPEEDIE tools along with the Dial-an-Operator module being developed under the SPRINT-CAD project. In addition to the use of tool agents for control, the demonstration included the use of FOREST as an integrated server to support both geometry and gridding operations in support of OO7.

Edwin C. Kan
kan@gloworm.stanford.edu
201 AEL, Stanford University, Stanford, CA 94305
Office: (415)723-9796
Fax: (415)725-7731

Date prepared: 1/27/95