TECHNICAL PROGRAM
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TECHNICAL PROGRAM
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Technical Program:
Monday, September 8, 1997
Tuesday, September 9, 1997,
Poster Session
| Session 7: Physical Models | |
| 8:30 - 8:55 | "Device Modeling of Statistical Dopant Fluctuations in MOS
Transistors" P. A. Stolk, F.P. Widdershoven, D.B.M. Klaassen, Philips Research, Eindhoven, The Netherlands |
| 8:55 - 9:20 | "Harmonic Balance Device Analysis of an LDMOS RF Power Amplifier
with Parasitics and Matching Network" F. Rotella, B. Troyanovsky*, Z. Yu, R. W. Dutton and Gordon Ma**, Stanford University, Stanford, CA, *Hewlett-Packard, Santa Rosa, and **Motorola, Austin, TX |
| 9:20 - 9:45 | "A Computationally-Stable Quasi-Empirical Compact Model for the
Simulation of MOS Breakdown in ESD-Protection Circuit Design" S. L. Lim, Z. Yu and R. W. Dutton, Stanford University, Stanford, CA
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| BREAK | |
| 10:15 - 10:40 | "On the Effective Mobility for Electrons in MOS Inversion
Channels" S. Biesemans and K. De Meyer, IMEC, Leuven, Belgium |
| 10:40 - 11:05 | "Extended Anisotropic Mobility Model Applied to 4H/6H-SiC
Devices" M. Lades and G. Wachutka, TU of Munich, Munich, Germany |
| 11:05 - 11:30 | "A Method for Unified Treatment of Interface Conditions Suitable
for Device Simulation" T. Simlinger and S. Selberherr, TU Vienna, Vienna, Austria
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| Session 8: Process Calibration and Modeling of Non-standard Devices | |
| 8:30 - 8:55 | "Methodology for Predictive Calibration of TCAD Simulators" G. Le Carval, P. Scheiblin*, D. Poncet, and P. Rivallin, LETI DMEL-CENG, Grenoble, France and *CISI Region Rhone-Alpes, Fontaine, France |
| 8:55 - 9:20 | "A Pocket Implant Model for sub 0.18 micron CMOS Process Flows" K. Vasanth, M. Nandakumar, M. Rodder, S. Sridhar, P.K. Mozumder, I.-C. Chen, Texas Instruments, Dallas, TX |
| 9:20 -9:45 | "Simulation of Advanced-LOCOS Capability for Sub-0.25um CMOS
Isolation" S. K. Jones, D.J. Bazley, R. Beanland, G. Badenes* and B. Scaife**, GEC-Marconi Materials Technology Ltd., UK, *IMEC, Belgium, and **GEC Plessey Semiconductors, UK
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| BREAK | |
| 10:15 - 10:40 | "Explanation of Anamalous Narrow Width Effect for nMOSFET with
LOCOS/NSL Isolation by Compressive Stress" S. Kim, K. Yang, J. Baek and C. Kim, LG Semicon Co., Ltd., Seoul, Korea |
| 10:40 - 11:05 | "Concurrent Technology, Device, and Circuit Development for
EEPROMs" R. Kakoschke, M. Miura-Mattausch, U. Feldman and G. Schraud, Siemens AG, Munich, Germany |
| 11:05 - 11:30 | "2D Process and Device Simulation of Lateral and Vertical Si/SiGe
High-Speed Devices" M. Gluck, D. Behammer, M. Schafer*, H. Walk* and U. Konig, Daimler-Benz AG, Ulm, Germany and CADwalk, Allmendingen, Germany |
| 11:30 - 11:55 | "Computer-Aided Design of Single-electron Boltzmann Machine Neuron
Circuit" M. Akazawa, T. Yamada and Y. Amemiya, Hokkaido University, Sapporo, Japan
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| LUNCH BREAK | |
| Session 9: Monte Carlo | |
| 1:30 - 1:55 | "A New Approach to Ionized-Impurity Scattering" H. Kosina, G. Kaiblinger-Grujin and S. Selberherr, TU Vienna, Vienna, Austria |
| 1:55 - 2:20 | "Convergence Estimation for Stationary Ensemble Monte Carlo
Simulations" C. Jungemann, S. Yamaguchi and H. Goto, Fujitsu Ltd, Kawasaki, Japan |
| 2:20 - 2:45 | "Substrate Current Fluctuation under Low Drain Voltages in
Si-MOSFET's" N. Sano and K. Natori, University of Tsukuba, Tsukuba, Japan
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| BREAK | |
| 3:15 - 3:40 | "Modeling of Saturation Velocity for Simulation of Deep Submicron
nMOSFETs" K. Matsuzawa, S. Takagi, M. Suda, Y. Oowaki and N. Shigyo, Toshiba Corp., Kawasaki, Japan |
| 3:40 - 4:05 | "Evaluation of Solenoidal and Statistically Enhanced Total
Current Densities in Multi-Particle Monte Carlo Device Simulators" P. Graf, S. Keith and B. Meinerzhagen, University of Bremen, Bremen, Germany
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| Session 10: Numerical Techniques for Process and Device Simulation | |
| 1:30 - 1:55 | "The Spherical Harmonic Method: Corroboration with Monte Carlo
and Experiment" C.-H. Chang, C.-K. Lin, W. Liang*, N. Goldsman, I.D. Mayergoyz, P. Oldiges*, and J. Melngailis, University of Maryland, College Park, MD and *DEC, Hudson, MA |
| 1:55 - 2:20 | "Sub-Domain Solution of the Boltzmann Equation in MOS Devices by
Means of Spherical Harmonics Expansion" A. Pierantoni, M. C. Vecchi and A. Gnudi, Universita di Bologna, Bologna, Italy |
| 2:20 - 2:45 | "Improved Local Refinement Algorithms for Adaptive Meshing of
Process Simulation Problems" M. E. Law and M. Cerrato, University of Florida, Gainesville, FL
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| BREAK | |
| 3:15 - 3:40 | "A New Numerical Formulation for Thermal Oxidation" V. S. Rao, T.J.R. Hughes, E. Kan and R. W. Dutton, Stanford University, Stanford, CA |
| 3:40 - 4:05 | "A Multiple Zone Inverse Diffusion Solver for Silicon
Processing" Y.S. Wang and C.H. Mastrangelo, University of Michigan, Ann Arbor, MI |