TECHNICAL PROGRAM
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TECHNICAL PROGRAM
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Technical Program:
Monday, September 8, 1997
Wednesday, September 10, 1997
| Session 3: Transient Enhanced Diffusion and Dose Loss
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| 8:30 - 8:55 | "A Model of {311} Defect Evolution Based on Nucleation Theory" G. Hobler, C. S. Rafferty and S. Sendaker*, Lucent Technologies, Murray Hill, NJ and *TU Vienna, Vienna, Austria |
| 8:55 - 9:20 | "Physical Modeling of Transient Enhanced Diffusion and Dopant
Deactivation via Extended Defect Evolution" A. H. Gencer, S. Chakravarthi and S. T. Dunham, Boston University, Boston, MA |
| 9:20 - 9:45 | "A New Diffusion Algorithm during Oxidation which can Handle Both
Phosphorous Pile-Up and B Segregation at Si-SiO2 Interface" H. Sakamoto and S. Kumashiro, NEC Corp., Kanagawa, Japan
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| BREAK | |
| 10:15 - 10:40 | "Modeling the Effect of Phosphorous Dose Loss at the SiO2
Interface on CMOS Device Characteristics" H.-H. Vuong, C.S. Rafferty, J.R. McMacken, J. Ning and S. Chaudhry, Lucent Technologies, Murray Hill, NJ and Orlando, FL |
| 10:40 - 11:05 | "Simulation of Transient Enhanced Diffusion of Boron Induced by
Silicon Self-Implantation" M. Uematsu, NTT Corp., Atsugi-shi, Japan
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| Session 4: Quantum Effects | |
| 8:30 - 8:55 | "Solution of 1-D Schrodinger and Poisson Equations in Single and
Double Gate SOI MOS" C. Fiegna and A. Abramo*, University of Ferrara, Italy and *University of Modena, Italy |
| 8:55 - 9:20 | "Density-Gradient Simulations of Quantum Effects in
Ultra-Thin-Oxide MOS Structures" M. G. Ancona, Z. Yu*, R.W. Dutton* and P.Vande Voorde**, Naval Research Laboratory, Washington, DC, *Stanford University, Stanford, CA, and **Hewlett-Packard, Palo Alto, CA |
| 9:20 - 9:45 | "The Influence of Localized States on Gate Tunnel Currents --
Modeling and Simulation" A. Wettstein, A. Schenk, A. Scholze and W. Fichtner, ETH-Zurich, Switzerland
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| BREAK | |
| 10:15 - 10:40 | "A General Purpose 2D Schrodinger Solver with Open/Closed
Boundary Conditions for Quantum Device Analysis" A. Abramo, University of Modena, Modena, Italy |
| 10:40 - 11:05 | "ICM--An Analytical Inversion Charge Model for Accurate Modeling
of Thin Gate Oxide MOSFETs" Y. Cheng, K. Chen, K. Imai and C. Hu, UC Berkeley, Berkeley, CA
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| LUNCH BREAK | |
| Session 5: Interconnect and MEMS Analysis
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| 1:00 - 1:25 | "The SyMPVL Algorithm and Its Applications to Interconnect
Simulation" R. W. Freund and P. Feldmann, Lucent Technologies, Murray Hill, NJ |
| 1:25 - 1:50 | "A Methodology for Full-Chip Extraction of Interconnect
Capacitance Using Monte Carlo Based Field Solvers" R.B. Iverson and Y.L. Le Coz*, Random Logic Corp. Fairfax, VA and *Rensselaer Polytechnic Institute, Troy, NY |
| 1:50 - 2:15 | "Fast Algorithms for Computing Electrostatic Geometric
Sensitivities" J. Wang and J. White, MIT, Cambridge, MA |
| 2:15 - 2:40 | "A Multi-level Newton Method for Static and Fundamental Frequency
Analysis of Electro-Mechanical Systems" N. Aluru and J. White, MIT, Cambridge, MA |
| 2:40 - 3:05 | "Capacitive Detection Method Evaluation for Silicon Accelerometer
by Physical Parameter Extraction from Finite Elements Simulations" B. Romanowics, M. Laudon, Y. Ansel and P. Renaud, Swiss Federal Inst. of Technology Lausanne, Laussane, Switzerland
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| Session 6:
Physical Models, Process and Device Effects
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| 1:00 - 1:25 | "Simulation of Secondary Ion Mass Spectrometry (SIMS) for Steep
Dopant Distribution Profiling" M. Hane, T. Ikezawa, and H. Matsumoto, NEC Corp., Sagamihara, Japan |
| 1:25 - 1:50 | "Simulation of Reverse Short Channel Effects with a Consistent
Point-Defect Diffusion Model" H. Sakamoto, S. Kumashiro, M. Hiroi, M. Hane and H. Matsumoto, NEC Corp., Kanagawa, Japan |
| 1:50 - 2:15 | "The Role of Boron Segregation and Transient Enhanced Diffusion
on Reverse Short Channel Effects" C. Machala, R. Wise, D. Mercer and A. Chatterjee, Texas Instruments, Dallas, TX |
| 2:15 - 2:40 | "Simulation of Defect Detection Schemes for Wafer Inspection in
VLSI Manufacturing" A. L. Swecker, A. J. Strojwas and X. Li and Ady Levy* Carnegie Mellon University, Pittsburgh, PA *KLA Instruments, San Jose, CA |
| 2:40 - 3:05 | "Mesoscale Modeling of Diffusion in Polycrystalline Structures" L. C. Bassman, N. R. Ibrahim, P. M. Pinsky, K. C. Saraswat, and M. D. Deal, Stanford University, Stanford, CA
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| 3:30 - 6:30 | Poster Session |