Yang Liu

I received my B.S. degree from the University of Science and Technology of China in 1998, and the Ph.D. degree in physics from the University of Illinois at Urbana-Champaign (UIUC) in 2002. From 1999 to 2002, I was a research assistant in the Beckman Institute at UIUC under the supervision of Prof. Karl Hess, where my work was on the simulation of Vertical-Cavity Surface-Emitting Lasers (VCSELs) based on a comprehensive laser diode simulator MINILASE. From 2003 to 2013, I worked firstly as a Research Associate and then as a Consulting Associate Professor in Prof. Robert Dutton’s Stanford TCAD group. My research interests include the design and simulation of novel biosensors, digital/analog electronic devices and optoelectronic devices such as LEDs and laser diodes. The platform of my simulation work is a general Partial Differential Equation solver, PROPHET. I also enjoyed being a lecturer for Stanford undergrad course EE116 “Semiconductor Device Physics” from 2011 to 2013.

Selected Publications:

Biosensors & Nanofluidic Devices:

·        K.-H. Paik, Y. Liu, V. Tabard-Cossa, M. Waugh, D. Huber, J Provine, R. Howe, R. Dutton, and R. Davis, “Control of DNA capture by nanofluidic transistors,” ACS Nano, 2012 (abstract)

·        K.-H. Paik, Y. Liu, V. Tabard-Cossa, D. Huber, J. Provine, R. Howe, R. Davis, and R. Dutton, “Experimental demonstration and analysis of DNA passage in nanopore-based nanofluidic transistors,” IEDM Tech. Dig.,30.6.1-30.6.4, 2011 (abstract)

·        Y. Liu, Q. Ran, and R. Dutton, “Electrical modulation of ion concentration in dual-gated nanochannels,” IEDM Tech. Dig., p.371-4, 2010 (abstract, pdf)

·        C. Heitzinger, Y. Liu, N. Mauser, C. Ringhofer, and R. Dutton, “Calculation of fluctuations in boundary layers of nanowire field-effect biosensors,” J. Comp. Theoretical Nanoscience, vol. 7, p.2574, 2010 (abstract)

·         Y. Liu, D. Huber, V. Tabard-Cossa, and R. Dutton, “Descreening of field effect in electrically gated nanopores,” Appl. Phys. Lett., vol. 97, 143109, 2010 (abstract, pdf)

·        Y. Liu, D. Huber, and R. Dutton, “Limiting and overlimiting conductance in field-effect gated nanopores,” Appl. Phys. Lett., vol. 96, 253108, 2010 (abstract, pdf)

·        Y. Liu and R. Dutton, “Effects of charge screening and surface properties on signal transduction in field effect nanowire biosensors,” J. Appl. Phys., vol. 106, 014701, 2009 (abstract, pdf)

·        Y. Liu and R. Dutton, “The role of surface charges and binding properties in silicon-based field effect nanowire biosensors,” Transducers’09, Denver, CO, June 2009

·        Y. Liu, K. Lilja, C. Heitzinger, and R. Dutton, “Overcoming the screening-induced performance limits of nanowire biosensors: a simulation study on the effect of electro-diffusion flow,” IEDM Tech. Dig. p.491-4, San Francisco, CA, Dec. 2008 (abstract, pdf)

·         Y. Liu, J. Sauer, and R. Dutton, "Effect of electro-diffusion current flow on electrostatic screening in aqueous pores," J. Appl. Phys., Vol. 103, 084701, 2008 (abstract, pdf) (an independent verification of the simulation results is given by J. Sanchez here.)

·         A. Talasaz, M. Nemat-Gorgani, Y. Liu, P. Stahl, R. Dutton, M. Ronaghi, and R. Davis, “Prediction of protein orientation upon immobilization on biological and nonbiological surfaces,” Proc. Natl. Acad. Sci., Vol. 103, p.14773-8, 2006 (abstract, pdf)

Electronic Devices:

·         C.-Y. Chen, Y. Liu, R. Dutton, J. Sato-Iwanaga, A. Inoue, H. Sorada, “Numerical study of flicker noise in p-type Si0.7Ge0.3/Si hetero-structure MOSFETs,” IEEE Trans. Electron Devices, Vol. 55, p.1741, 2008 (abstract, pdf);

·         J. Hu, Y. Liu, C.Z. Ning, R. Dutton, and S.-M. Kang, “Fringing field effects on electrical resistivity of semiconductor nanowire-metal contacts,” App. Phys. Lett. Vol. 92, 083503, 2008 (abstract, pdf)

·         Y. Liu, S. Cao, and R. Dutton, “Numerical investigation of low frequency noise in MOSFETs with high-k gate stacks,” Proceedings of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), p.99-102, 2006 (abstract, pdf)

·         Y. Liu, A. Shanware, L. Colombo, and R. Dutton, “Modeling of charge trapping induced threshold voltage instabilities in high-k gate dielectric FETs,” IEEE Electron Device Letters, Vol. 27, p.489-491, 2006 (abstract, pdf)

·         J.-H. Chun, Y. Liu, C. Duvvury, and R.W. Dutton, “Implementation of temperature dependent contact resistance model for the analysis of deep submicron devices under ESD,” IEDM Tech. Dig., Dec., 2003 (abstract, pdf)

Optoelectronic Devices:

·         Y. Liu, Z. Wang, M. Han, S. Fan, and R. Dutton, “Mode-locking of monolithic laser diodes incorporating coupled-resonator optical waveguides,” Optics Express, Vol. 13, p.4539-4553, 2005 (abstract, pdf)

·         G. Veronis, W. Suh, Y. Liu, M. Han, Z. Wang, R.W. Dutton, and S. Fan, “Coupled optical and electronic simulations of electrically pumped photonic-crystal-based light-emitting diodes,” Journal of Applied Physics, Vol. 97, p.044503, 2005 (abstract, pdf)

·         Y. Liu, W.-C. Ng, K.D. Choquette, and K. Hess, “Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers,” IEEE Journal of Quantum Electronics, Vol. 41, p. 15, 2005 (abstract, pdf)

·         Y. Liu, K.D. Choquette, and K. Hess, “The electrical turn-on characteristics of vertical-cavity surface-emitting lasers,” Applied Physics Letters, Vol. 83, p.4104, 2003 (abstract, pdf)

·         W.-C. Ng, Y. Liu, and K. Hess, “Resonant-wavelength control and optical-confinement analysis for graded SCH VCSELs using a self-consistent effective-index method,” Journal of Lightwave Technology, Vol. 21, p. 555, 2003 (abstract, pdf)

·         Y. Liu, W.-C. Ng, B. Klein, and K. Hess, “Effects of spatial non-uniformity of optical transverse modes on the modulation response of vertical-cavity surface-emitting lasers,” IEEE Journal of Quantum Electronics, Vol. 39, p.99, 2003 (abstract, pdf)

·         Y. Liu, W.-C. Ng, F. Oyafuso, B. Klein, and K. Hess, “Simulating the modulation response of VCSEL’s: the effects of diffusion capacitance and spatial hole-burning,” IEE Proc.-Optoelectronics, Vol. 149, p.182, 2002 (abstract, pdf)

 

(650)723-9796

yangliu@gloworm.stanford.edu

CIS Extension, Room 334

Integrated Circuits Laboratory

Stanford University

Stanford, CA 94305-4075

 

Disclaimer: Personal use only. Copyrights of the listed papers may belong to the publishers.