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In this chapter, some standard model systems are described which
are available in the Prophet distribution. Each ``system'' is a
set of equations forming a particular type of description of
the semiconductor device.
To use the system entitled ``silicon_poisson'', for example,
enter the following line near the beginning of the Prophet input
file:
include(silicon_poisson)
The basic systems currently supported are listed below; more
detailed explanations follow in subsequent sections. The first three
systems cover most mainstream applications:
- silicon_poisson: Solve Poisson equation only (no
current flow). Used for initial solutions.
- silicon_dd: Solve Poisson equation and two current
continuity equations (electrons and holes). Uses Arora dopant
dependent mobility model and longitudinal field mobility reduction
by default.
- silicon_dd_lombardi: Same as silicon_dd, but with
Lombardi transverse field mobility model.
- silicon_dg5: Five equation density gradient system
(quantum corrections, current flow). Uses Arora dopant dependent
mobility model and longitudinal field mobility reduction by
default.
- silicon_dg_lombardi: Same as above, but with Lombardi
transverse field mobility model.
- silicon_poisson_ex: Same as silicon_poisson, but
also calculates vertical E-field. Useful for 1-D MOS capacitors,
for example.
- silicon_dd_ex: Same as silicon_dd, but with
calculation of transverse electric field.
- silicon_dg3: Three equation density gradient system
(quantum corrections, no current flow).
- silicon_dg3_ex: Three equation density gradient system
(no current flow). Useful for 1-D MOS capacitors, for example.
- silicon_dg5_ex: Same as silicon_dg5, but with
calculation of transverse electric field.
All of the above semiconductor systems requre a
netdope field to be defined in order to specify the doping
profile. While the format of the doping specification can very
greatly, an example is shown below (and not repeated for the
individual systems):
netdope - set doping profile for structure
# doping example: 1-D diode (see ``field'' command defintion for more info)
field set=boron value=1.0e18*gbox(X,-0.3,0.0,0.1) material=silicon
field set=arsenic value=1.0e18*gbox(X,0.5,0.2,0.1) material=silicon
field set=netdope value=arsenic-boron
Detailed descriptions of the current built-in systems follow this
section. All of the descriptions use the following definitions:
Prophet Development
Mon Jul 1 14:45:00 PDT 2002