Characterization of Contact Electromechanics Through Capacitance-Voltage Measurements and Simulations E. K. Chan, K. Garikipati, R. W. Dutton Electrostatically-actuated polysilicon beams fabricated in the MUMPs process are studied, with an emphasis on the behavior when the beam is in contact with an underlying silicon nitride dielectric layer. Detailed 2D electromechanical simulations, including the mechanical effects of stepups, stress-stiffening and contact, as well as the electrical effects of fringing fields and finite beam thickness, are performed. Comparisons are made to quasi-2D and 3D simulations. Pull-in voltage and capacitance-voltage measurements together with 2D simulations are used to extract material properties. The electromechanical system is used to monitor charge buildup in the nitride which is modeled by a charge trapping model. Surface effects are included in the simulation using a compressible-contact-surface model. Monte Carlo simulations reveal the limits of simulation accuracy due to the limited resolution of input parameters.