Stanford BiCMOS 2D Field Oxidation SUPREM-IV.GS Simulation

This example shows a SUPREM-IV.GS simulation of the Stanford Center for Integrated Systems' BiCMOS process. 
initial								final
Click here for the complete SUPREM-IV.GS input specification for this simulation.

The pages linked to the following anchor points shwo the output, both text and graphics, from the SUPREM-IV.GS simulation. The current structure was saved to a file a several points in the simulation and subequently plotted.

Initialization, Grid Setup, and Pre-Field Oxidation

Field Oxidation Sequence - Wet O2, First 2 Minutes

Field Oxidation Sequence - Wet O2, To 9 Minutes

Field Oxidation Sequence - Wet O2, To 24 Minutes

Field Oxidation Sequence - Wet O2, To 44 Minutes

Field Oxidation Sequence - Wet O2, To 70 Minutes

Field Oxidation Sequence - Wet O2, To 100 Minutes

Field Oxidation Sequence - Wet O2, To 140 Minutes

Field Oxidation Sequence - Wet O2, To Final 190 Minutes

Field Oxidation Sequence - Dry O2, For 10 Minutes