Edwin has a wide participation in the TCAD project including development of advanced device simulators (with emphases on novel transport models, systematic methodology of calibration through theoretical and experimental characterization, and model abstraction for circuit simulation), TCAD development environment support (servers and intertool communication), and use of TCAD tools for advanced device design in many kinds of semiconductor technologies.
His main research interests are in the submicron semiconductor device and process physics and simulation, technology CAD framework and numerical methods on partial differential equations. His personal hobby includes reading, basketball, table tennis and enjoyment of fine music.
During his graduate study, he has extended two transport models to be practically implemented in advanced device simulators: the multidimensional augmented drift-diffusion model and the improved enery transport model[1]. He was one of the principal developers of the advanced device simulator, SEMICAD[2]. His current research at Stanford concentrates on using interdisciplinary efforts of object-oriented design, novel numerical methods, parallel computing, computational geometry and semiconductor physics to push the TCAD tools to a new front for predictive design and in-process control.
[1] IEEE EDL, 12(419), 1991; IEEE EDL, 13(26), 1992.
[2] Dawn Technologies, Inc., Sunnyvale, CA 94086.
His personal page is also available for reading.
Edwin Kan(kan@gloworm.Stanford.EDU)