Some useful references to the literature

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Scaling challenges

Alternative dielectrics

First principles computation

Applications

 

 

Scaling challenges for sub-100nm CMOS technology

  1. P. Packan, "Pushing the limits," Science, vol. 285, p. 2079, 1999.

  2. D. Muller, T. Sorsch, S. Moccio, F. Baumann, K. Evans-Lutterodt and G. Timp, "The electronic structure at the atomic scale of ultrathin gate oxides," Nature, vol. 399, p. 758, 1999.

Alternative high-k gate dielectrics

  1. G. Wilk, R. Wallace, and J. Anthony, "Hafnium and zirconium silicates for advanced gate dielectrics," J. Appl. Phys., vol. 87, p. 484, 2000.

Background on first principles computation

  1. M. Payne, M. Teter, D. Allan, T. Arias and J. Joannopoulos, "Iterative minimization techniques for ab initio total-energy calculations: molecular dynamics and conjugate gradients," Rev. Mod. Phys., vol. 64, p. 1045, 1992.

  2. S. Louie, "Quasiparticle theory of electron excitations in solids," p. 83 in Quantum Theory of Real Materials, Eds. J. Chelikowsky and S. Louie, Kluwer Academic Publishers, Boston, 1996.

  3. W. Harrison, Elementary Electronic Structure, World Scientific, Singapore, 1999.

Applications of first principles computation to CMOS scaling challenges

  1. A. Kawamoto, J. Jameson, K. Cho, and R. Dutton, "Challenges for atomic scale modeling in alternative gate stack engineering," accepted (April 2000) for publication in IEEE Transactions on Electron Devices special issue, Computational Electronics:  New Challenges and Directions (November 2000).

  2. A. Pasquarello, M. Hybertsen and R. Car, "Interface structure between silicon and its oxide by first-principles molecular dynamics," Nature, vol. 396, p. 58, 1998.

  3. A. Yokozawa, A. Oshiyama, Y. Miyamoto and S. Kumashiro, "Oxygen vacancy with large lattice distortion as an origin of leakage currents in SiO2," IEDM Tech. Dig., 1997, p. 703.

  4. C. Kaneta, T. Yamasaki, T. Uchiyama, T. Uda, and K. Terakura, "Structure and electronic property of Si(100)/SiO2 interface," Microelectronic Eng., vol. 48, p. 117, 1999.

  5. A. Pasquarello, M. Hybertsen, and R. Car, "Structurally relaxed models of the Si(001)-SiO2 interface," Appl. Phys. Lett., vol. 68, p. 625, 1996.

  6. R. Buczko, S. Pennycook, and S. Pantelides, "Bonding arrangements at the Si-SiO2 and SiC-SiO2 interfaces and a possible origin of their contrasting properties," Phys. Rev. Lett., vol. 84, p. 943, 2000.

     

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