Research Topics




Intrinsic SiO2 Breakdown Model
for Low Voltage Lifetime Extrapolation

Jung-Suk Goo, Gyoyoung Jin, Zhiping Yu, and Robert W. Dutton

A new quantitative model for silicon dioxide intrinsic breakdown has been presented based on an analytical anode hole injection model combined with the use of a numerical integration technique. In the progress of model development, it is found that the decrease of the cathode electric field (dEox) empirically has linear dependence on log(time) during constant voltage stress and also the 1/Eox model is still useful with constant extrapolation slope of about 540 MV/cm. This model is valid for predicting ultra-thin oxide reliability down to 5 nm and provides a very powerful tool for predicting maximum allowable supply voltages.

High Frequency Noise in CMOS Low Noise Amplifiers

Jung-Suk Goo, Zhiping Yu, Thomas H. Lee, and Robert W. Dutton

The importance of CMOS technology is increasing in RF design applications owing to the promise of integrating electronic systems on a single silicon chip. As recent works have demonstrated the viability of the radio-on-a-chip using standard CMOS processes, CMOS RF is rapidly emerging as a practical solution of low-cost, low-power applications such as Bluetooth. The first stage of a radio receiver is typically an LNA (low noise amplifier), which needs to provide sufficient gain while introducing as little noise as possible. Since optimum design for noise is different from optimum design for other performance, accurate noise information and design guidelines are critical. This research investigates the physical origin and contribution mechanism of noise sources in MOSFETs, as well as a design methodology for fully integrated LNAs.



Useful Documents for RF Circuit Design






Home Page of Jung-Suk Goo

Prof. Dutton's Research Group