RF Noise Simulation for Submicron MOSFET's
Published in Proceedings of 1999 Symposium on VLSI Technology,
Kyoto, Japan, pp. 153-154, June 14-16, 1999.
Using an active transmission line concept and a two-dimensional
HD device simulator, accurate RF intrinsic noise simulation results for
deep submicron MOSFET's are presented for the first time.
The segmentation error is negligible up to hundreds of GHz.
Results show that the HD model captures physical effects that are important
for these small devices.
The simulation results for 0.25um MOSFET show good agreement with
measured data when the loss due to Gopt is considered.
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