An Accurate and Efficient High Frequency Noise
Simulation Technique for Deep Submicron MOSFETs
IEEE Transactions on Electron Device, Vol. 47, No. 12, pp. 2410-2419,
December 2000.
An accurate and computationally efficient simulation technique for high
frequency noise performance of deep submicron MOSFETs is proposed.
This technique is based on an active transmission line concept but
uses 2-D device simulation. The Langevin stochastic source term
is introduced as a local noise source and the small-signal behavior of
the MOSFET is represented by a cascaded two-port network characterized
in a common gate configuration.
Since the local static quantities required for noise calculation are
imported from a 2-D numerical device simulator using advanced
transport models, this technique is able to capture dispersive
non-equilibrium effects and incorporate second-order
effects caused by complex processing.
Background of the proposed approach includes details of the impedance field
formulation.
Segmentation itself does not cause significant error in the noise calculations
within a practical range of frequencies and meshing elements.
The long channel noise simulation results are in good agreement with
classical values; short channel results based on the HD model
successfully describe the reported excess noise in short channel MOSFETs.
The transformed simulation results of the HD model show excellent
agreement with the de-embedded measurement data, both in bias and
frequency dependencies, while the DD model largely underestimates
the experimental results.
This paper demonstrates and explains the importance of advanced (i.e. HD)
transport models for 2-D noise analysis and also verifies the use of
the model based on noise simulation results for deep submicron MOSFETs.
The proposed simulation technique is accurate and fast enough for
practical RF noise performance analysis of deep submicron MOSFETs.
Download
the paper (PDF)