Impact of Substrate Resistance on Drain Current Noise in MOSFETs
Published in the Proceedings of International Conference on Simulation of
Semiconductor Processes and Devices (SISPAD), Athens, Greece, pp. 182-185,
Sep. 2001.
This paper identifies the physical origin and contribution mechanism
of substrate induced channel thermal noise in MOSFETs.
Resistance of the substrate generates potential fluctuations that in turn
produce additive channel noise via the channel depletion capacitor.
The additive noise may result in a frequency dependence of the drain current
noise due to a pole associated with the Rsub-Cdepl network.
Its bias and length dependencies conforms to those of reported excess noise,
it thus may exaggerate the amount of the channel thermal noise factor.
Download the paper (PDF)
Download the slide (PDF)