The Equivalence of van der Ziel and BSIM4 Models
in Modeling the Induced Gate Noise of MOSFETs
Technical Digest of IEDM, pp. 811-814, Dec. 2000
The de facto industry standard model BSIM3 has not accounted
for the induced gate noise. As CMOS becomes increasingly used for RF
applications, it is apparent that the inclusion is necessary. The
van der Ziel model is the well accepted and the
most physically sound model.
The next generation model BSIM4, released for public use in March 2000,
amends the shortcoming of BSIM3 by addressing
the induced gate noise. The BSIM4 model, however, adopts a drastically
different modeling strategy, in contrast to the van der Ziel model.
For examples, the gate current noise in the van der Ziel model is frequency
dependent and correlated with the drain current noise. By contrast,
the induced gate noise in BSIM4 is accounted for by a voltage noise source,
which is frequency-independent, uncorrelated,
and connected to the source electrode instead of the gate.
Thus it is important to validate whether the new approach is in fact
equivalent to the van der Ziel model.
This paper is the first independent comparison between BSIM4 and
the van der Ziel model. Despite their stark differences in
modeling strategy, BSIM4 is strictly equivalent to the classical van
der Ziel model in practical circuits including non-grounded source
conditions of operation.
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