• 1997
  • "B Diffusion and Clustering in Ion Implant Si: the Role of B Cluster Precurors", L. Pelaz, M. Jaraiz, G.H. Gilmer, H.-J. Gossmann, C.S. Rafferty, D.J. Eaglesham, J.M. Poate, MRS Spring Meeting 1997.
  • "Modeling the effect of Phosphorus dose loss at the SiO2 interface on CMOS device characteristics", H.-H. Vuong, C.S. Rafferty, J.R. McMacken, J. Ning, S. Chaudhry, submitted to SISPAD 1997
  • "A Computationally Efficient Technique to Extract Diffused Profiles and Three Dimensional Collector Resistances of High Energy Implanted Bipolar Devices", S. Chaudhry, Y.F. Chyan, A.S. Chen, W.J. Nagy, J.L. Lee, K.H. Lee, F.A. Stevie, P.A. Layman, C.S. Rafferty, H.-H. Vuong, submitted to SISPAD 1997
  • "A Model of {311} Defect Evolution Based on Nucleation Theory", G. Hobler, C.S. Rafferty, S. Senkader, submitted to SISPAD 1997
  • "Progress in Predicting Transient Diffusion", C.S. Rafferty, invited presentation for SISPAD 97.
  • "Suppression of Reverse Short Channel Effect by the Use of High Energy Implantation", S. Chaudhry, C.S. Rafferty, W.J. Nagy, Y.F. Chyan, M.S. Carroll, A.S. Chen, K.H. Lee, submitted to IEDM 1997.
• 1996
  • "Model parameter refinement and its effect on the calculation of reverse short channel effect", M. Hane, C.S. Rafferty, T. Ikezawa, H. Matsumoto, Proc. SISPAD 1996
  • "Effect of Oxide Interface Traps and Transient Enhanced Diffusion on the Process Modeling of PMOS Devices", H.-H. Vuong, C.S. Rafferty, S.A. Eshraghi, J.L. Lentz, P.M. Zeitzoff, M.R. Pinto, S.J. Hillenius, IEEE Trans. Ed. v43(7) p.1 (1996)
  • "Modeling Boron Precipitation in MBE-grown Superlattices", C.S. Rafferty, H.-J. Gossman, G.H. Gilmer, D.J. Eaglesham, P.A. Stolk, Abstract 326, ECS Spring Meeting, Los Angeles, May 1996
  • "The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750C", H.S. Chao, C.S. Rafferty, P.B. Griffin, J.D. Plummer, Appl. Phys. Lett. v69 p2113 (1996)
  • "Design and Performance Benchmarking of an Evolutionary 0.25um CMOS Technology", S.A. Eshraghi, H.-H. Vuong, C.S. Rafferty, S.J. Hillenius, M.R. Pinto, P.M. Zeitzoff, submitted to IEEE Trans. Electron Devices
  • "Modeling C-V shifts in Boron/BF2-implanted capacitors", H.-H. Vuong, C.S. Rafferty, W.M. Mansfield, H.S. Luftman, D.C. Jacobson, M.R. Pinto, A. Eshraghi, J.R. Mcmacken, T.E. Ham, IEDM Tech. Dig. 1996
  • "Diffusion parameters of indium for silicon process modeling", I.C. Kizilyalli, T.L. Rich, F.A. Stevie, C.S. Rafferty, J. Appl. Phys. v80(9) p4944 (1996)
• 1995
  • J.M. Poate, D.J. Eaglesham, G.H. Gilmer, H-J. Gossmann, M. Jaraiz, C.S. Rafferty, P.A. Stolk "Ion Implantation and Transient Enhanced Diffusion", IEDM Tech. Digest, 1995
  • C.S. Rafferty, G.H. Gilmer, M. Jaraiz, D. Eaglesham, H-J. Gossmann, "Simulation of cluster evaporation and transient enhanced diffusion in silicon", Appl. Phys. Lett. v68(17) p2395 (1996)
  • C.S. Rafferty, "Physical Modeling of Transient Enhanced Diffusion", SRC Topical Research Conference on Transient Enhanced Diffusion", Boston, Oct 12-13, 1995
  • C.S. Rafferty, "TCAD Status of PROPHET", SRC Topical Research Conference on Transient Enhanced Diffusion", Boston, Oct 12-13, 1995
  • M. Darwish, C. Rafferty, R.K. Williams, M. Cornell, H. Yilmaz, "Transient Enhanced Threshold Shifts in Power MOS Transistors", IEDM Tech. Digest, 1995
  • P.Lloyd, C.C.McAndrew, M.J.McLennan, S.R.Nassif, K.Singhal, K.Singhal, P.M.Zeitzoff, M.N.Darwish, K.Haruta, J.L.Lentz, H-H. Vuong, M.R.Pinto, C.S.Rafferty, Kizilyalli I.C, "Technology CAD at AT&T", Microelectronics Journal 26 p.79 (1995)
  • H.-J.Gossmann, C.S.Rafferty, F.C.Unterwald, T.Boone, T.K. Mogi, M.O.Thompson, H.S. Luftman, " Behavior of intrinsic Si point defects during annealing in vacuum", Applied Physics Letters 6791)) p.1558 (1995)
  • H.-J. Gossmann, P.A. Stolk, D.J. Eaglesham, C.S. Rafferty, J.M. Poate, "Fast Metal Diffusers in Si in the Presence of Si Self-Interstitial Traps", Applied Physics Letters, 67(21) p3135 (1995)
  
  
• 1994
  • C.S. Rafferty, "Physical Modelling of Silicon Thermal Processing", Plenary Invited Paper at ESSDERC-94, the European Solid State Device Research Conference, Edinburgh, Sep 1994
  • C.S. Rafferty, "Radiation Effects and Silicon Process Simulation", Invited Paper at COSIRES-94, the International Conference on Computer Simulation of Radiation Effects in Solids, Santa Barbara, Jul 1994.
  • D.R. Lim, C.S. Rafferty, F.P. Klemens, "The Role of the Surface in Transient Enhanced Diffu- sion", Applied Physics Letters, 67(16) p2302 (1995)
  • H.-H. Vuong, H.-J. Gossmann, C.S. Rafferty, H.S. Luftman, F.C. Unterwald, D.C. Jacobson, R.E. Ahrens, T. Boone, P.M. Zeitzoff, "Influence of Fluorine Implant on Boron Diffusion: Determination of Process Modeling Parameters", J. Appl. Phys. 77(7) p3056 (1995)
  • H.-J. Gossmann, G.H. Gilmer, C.S. Rafferty, F.C. Unterwald, T. Boone, J.M. Poate, H.S. Luft- man, W. Frank, "Determination of Si Self-Interstitial Diffusivities from the Oxidation- enhanced Diffusion in B Doping-Superlattices: The Influence of the Marker Layers", J. Appl. Phys. 77(5) p1948 (1995)
  
  
• 1993
  • C.S. Rafferty, M.D. Giles, H.-H. Vuong, S.,A. Eshraghi, M.R. Pinto, S.J. Hillenius, "Anomalous short-channel body coefficients due to transient enhanced diffusion", Proceedings of the 1993 International Workshop on VLSI Process and Device Modeling, Nara, May 1993, p. 148.
  • C.S. Rafferty, H.-H. Vuong, S.A. Eshraghi, M.D. Giles, M.R. Pinto, S.J. Hillenius, "Explanation of Reverse Short Channel Effect by Defect Gradients", Proceedings of the 1993 International Electron Device Meeting, Wash- ington, Dec 1993, p. 311
  • H.-J. Gossmann, A.M. Vredenberg, C.S. Rafferty, H.S. Luftman, F.C. Unterwald, D.C. Jacobson,T. Boone, J.M. Poate, "Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy", J. Appl. Phys. 74(5) p.3150 (1993)
  • H.-J. Gossmann, C.S. Rafferty, H.S. Luftman, F.C. Unterwald, T. Boone, J.M. Poate, "Oxidation enhanced diffu- sion in Si B-doping superlattices and Si self-interstitial diffusivities", Appl. Phys. Lett. 63(5), p. 639 (1993)
  • N. Lifshitz, S. Luryi, M.R. Pinto, C.S. Rafferty, "Active-Gate Thin-Film Transistor", Electron Device Letters, 14(8), p. 394 (1993)
  • N. Lifshitz, M.R. Pinto, C.S. Rafferty, S.C. Fang, "Self-Aligned Metallization Technique for Deep-Submicron IC's", Electron Device Letters,!4(11), p.518 (1993)
  • M.R. Pinto, J. Bude, C.S. Rafferty, "Simulation of ULSI Silicon MOSFETs", Proceedings of the 1993 Interna- tional Workshop on VLSI Process and Device Modeling, Nara, May 1993, p. 22
  • M.R. Pinto, C.S. Rafferty, R.K. Smith, J. Bude, "ULSI Technology Development by Predictive Simulation", IEDM Tech. Dig. p. 701 (1993)
  
  
• 1992
  • B.G. Park, J. Bokor, H.S. Luftman, C.S. Rafferty, M.R. Pinto, Ultrashallow junctions for ULSI using As2+ implantation and rapid thermal anneal, IEEE Electron Device Letters, 13(10) p.507, Oct 1992.
  • R.-H. Yan, K.F. Lee, D.Y. Jeon, Y.O. Kim, B.G. Park, M.R. Pinto, C.S. Rafferty, D.M. Tennant, E.H. Westerwick, G.M. Chin, M.D. Morris, K. Early, P. Mulgrew, W.M. Mansfield, R.K. Watts, A.M. Voshchenkov, J. Bokor, R.G. Swartz, A. Ourmazd, "89-Ghz fT room-temperature silicon MOSFETs" IEEE Electron Device Letters 13(5) p. 256, May 1992.
  • H.-J. Gossman, A.M. Vredenberg, C.S. Rafferty, F.C. Unterwald, H.S. Luftman, D.C. Jacobson, J.M. Poate "Dopant and point-defect diffusion in Si thin films grown by molecular beam epitaxy", Gordon Conference on Defects, Line Defects and Interfaces, July 20-24, 1992.
  • M.R. Pinto, D.M. Boulin, C.S. Rafferty, R.K. Smith, I.M. Kizilyalli, M. Thoma, "Three-dimensional characterization of bipolar transistors in a submicron BiCMOS technology using integrated process and device simulation" IEDM Tech. Dig. (1992).
  • S.A. Audet, A.E. White, K.T. Short, Y-F. Hsieh, F.M. Ross, C.S. Rafferty, "30 nm CoSi$""sub 2$ surface layers for contact metallization in complementary metal-oxide-semiconductor processes, Appl. Phys. Lett. 61(19), Nov 1992.
  • S.A. Audet, C.S. Rafferty, K.T. Short, A.E. White, U.S. Patent 5,122,479, Jun 16, 1992.
  
  
• 1991
  • R.-H. Yan, A. Ourmazd, K. Lee, C. Rafferty and M. R. Pinto. "Scaling the Si Metal-Oxide-Semiconductor Field Effect Transistor Using Vertical Doping Engineering", Appl. Phys. Lett. 59(25) p3315 (1991)
  
  
• 1990
  • C.S. Rafferty, ``2D Modeling of Viscous Flow in Thermal SiO$""sub 2$'', Invited Talk at the Second International Symposium on Process Physics and Modeling in Semiconductor Technology, Montreal, May 1990
  • P.B. Griffin, C.S. Rafferty, ``A Viscous Nitride Model for Nitride/Oxide Isolaton Structures'', Proceedings of the International Electron Device Meeting, San Francisco, Dec. 1990
  • M.R. Pinto, W.M. Coughran, Jr., C.S. Rafferty, R.K. Smith, ``Device Simulation for Silicon ULSI'', in Computational Electronics, Ed. K. Hess, Kluwer 1990.