Alliance 1998

- Robert W. Dutton
Stanford University
April 28, 1998

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Dutton: AT Team for Nanomaterials

{Complete postscript file}

• Introduction

• Example from Computational Electronics

• PDE-based Hierarchical Modeling

• Fabrication of Nano-Structures

• Atomic-Scale Modeling of Interfaces

• Summary & Conclusions

PROPHET

For the complete set, download the postscript file.

Introduction

Contents

Team in PROPHET Project

Chronicles in Device Simulation of PROPHET

Chronicles in Device Simulation of PROPHET (cont.)

Chronicles in Device Simulation of PROPHET (cont.)

Chronicles in Device Simulation of PROPHET (cont.)

Available Device Simulation Features in PROPHET

Features Under Development

Electro-thermal System Simulation

Asymmetric Temperature Distribution in a Symmetric pn Diode

Vertical pn Junction @Vdd = 2V with Different Number of Thermal Contacts

Density Gradient (DG) Transport

DG System Description

C-V Simulation of MOS Capacitor with tox = 31Å (0.18µm CMOS)

DG Simulation of MOSFET

Validation Over Tech Generations

Validation (cont.)

Hybrid Empirical Approach to QM Corrections

Existing Empirical Models and Their Deficiencies

MOS Cap w/ t_ox = 21Å

van Dort's model (1994)

Hybrid Empirical Model

Hybrid Empirical Model (cont.)

Singularity with Dort Model and Its Remedy

Validation of Hybrid QM Model

Planned Work