Hybrid Type Three-dimensional Oxidation Modeller
With continued minimization of device structure and the development of
new semiconductor process, the need of three-dimensional process
simulation is is becoming more and more important in ULSI processing.
My work has been focused on the development of multi-dimensional
process simulator which cann predict the doping profile after the ion
implantation and diffusion process and can show the exact shape of
LOCOS structure and the distribution of hydrodinamic pressure in the
oxide. The two-dimensional oxidation was simulated by BEFOX(Boundary
Elements For OXidation) which is joined in SUPREM IV as a stand-alone
type. Three-dimensional ion implation and oxidation programs (both of
them employed analytical models) will be joined to AESOP as one of
processors.
My current project aims the development of hybrid type three-dimensional
oxidation modeller. The "hybrid" means that there are two type of models
mixed in one process model. In other words, an analytical model and a
numerical model are combined for the simulation of three-dimensional
oxidation. By these scheme, we can predict 3D shape of oxide with
the following advantages.
- High speed computation than fully numerical scheme
- Low cost on the memory
- High capability of simulation
The hybrid simulator could take a role on oxidation modeling before the
development of robust 3D numerical simulator.
Hwasik Park(hspark@gloworm.Stanford.EDU)
AEL 211
Integrated Circuits Laboratory
Stanford University
Stanford, CA 94305-4055