The DUET model addresses electronic transports based on fundamental physical principles governing the conservation of particles, charges, and energy, and energy transfer mechanisms among the carrier and lattice systems. The transport model is derived from the moment approach of solving the Boltzmann transport equation (BTE). The device equations to be solved are the Poisson's equation, continuity equations for electrons and holes, energy balance equations for electrons and holes, and the thermal diffusion equation for lattice. The DUET model solves six independent variables: the electric potential psi, electron and hole concentrations n_e and n_h, electron and hole temperatures T_e and T_h, and the lattice temperature T_L. These six variables uniquely determine the electrical state of the device.
PISCES-2ET has been applied extensively to investigate hot-carrier effects in deep-submicron devices and lattice heating induced phenomena. As an example, we obtained simulation verification of the physical mechanisms governing substrate current in a family of MOSFETs down to 0.1 micron gate lengths using PISCES-2ET which coupled with energy-dependent mobility and impact ionization models. In addition, PISCES-2ET is a very powerful design tool for modeling electro-thermal characteristics in devices of heterogeneous material composition such as HBJs, LEDs and semiconductor lasers. We have already implemented data structures which allows material selection for multiple-layers devices from a set of commonly used ternary and quaternary material systems.
Documentation for this program is available in postscript form.
Lydia So (so@gloworm.Stanford.EDU)