DEPOSIT
Deposit a layer.
SYNOPSIS
- deposit
- ( silicon | oxide | oxynitr | nitride | poly | photores | alumin | gaas )
thickness = n [ divisions = n ]
[ none | arsenic | antimony | boron | phosphor | beryllium | magnesium | selenium | isilicon | tin | germanium | zinc | carbon | generic ]
[ conc = n ] [ space = n ] [ file = string ]
DESCRIPTION
This statement provides a primitive deposition capability. Material is deposited on the "exposed" surface of the structure, and its upper surface becomes the new exposed surface. This code is now based on the generalized triangulation package originally written by Conor Rafferty as a stand-alone program, tri. This tends to be significantly more robust than the grid generation algorithm in earlier versions of SUPREM-IV (e.g. 8912). There have also been several enhancements in the handling of the offset line. It is now possible, for instance, to fill a trench completely.
- silicon | oxide | oxynitr | nitride | poly | photores | alumin | gaas
- The material to be deposited.
- thickness
- The thickness in microns.
- divisions
- The number of vertical grid spacings in the layer, default 1.
- none | arsenic | antimony | boron | phosphor | beryllium | magnesium | selenium | isilicon | tin | germanium | zinc | carbon | generic
- The type of doping in the deposited layer.
- conc
- This floating point parameter specifies the level of the doping in the deposited layer.
- space
- This floating point parameter represents the average spacing between points along the outside edge of the deposit.
- file
- This string parameter specifies the name of a file that contains a string that contains the coordinates associated with the deposit surface. This file could be generated using a topography simulator such as SAMPLE.
EXAMPLES
- deposit oxide thick=0.02
- This deposits silicon dioxide 200 angstroms thick on the surface of the silicon.
BUGS
Only uniform grid in the deposited material.
Occasionally makes grid errors in following the surface.
The offset profile is not based on any physical model.
SEE ALSO
The etch statement.