8:00 - 8:30 a.m. Registration
8:30 - 8:45 Welcome, H. Bennett, NIST
Chairmen: Bernd Meinerzhagen, University of Aachen and Mark Lundstrom, Purdue University
8:45 - 9:10 "Semi-Empirical Local NMOS Mobility Model for 2-D Device Simulation Incorporating Screened Minority Impurity Scattering," S. A. Mujtaba, R. W. Dutton, and D. L. Scharfetter*, Stanford University, *Intel.
9:10 - 9:35 "Simulation of Amplified Gate-Induced-Drain-Leakage (GIDL) in Short-Channel SOI MOSFETs,"A. V. Schwerin, W. Bergner, and H. Jacobs, Siemens AG.
9:35 - 10:00 "Analytical Calculations of a Figure of Merit for Novel MOSFET Architectures for the Sub 0.25 micron Range," S. Biesemans, S. Kubicek, and K. D. Meyer, IMEC.
10:00 - 10:15 Break
10:15 - 10:40 "Two-Dimensional Energy-Dependent Substrate Current Models for Deep Submicron MOSFETs," C.-F. Yeap, K. Hasnat, V. M. Agostinelli, Jr.*, T. J. Bordelon*, S. Jallepalli, X. L. Wang*, C. M. Maziar, and A. F. Tasch, University of Texas, Austin, *Intel.
10:40 - 11:05 "Analysis of Amorphous-Silicon Devices," M. Valdinoci, A. Gnudi, M. Rudan, and G. Fortunato*, University of Bologna, *IESS-CNR.
11:05 - 11:30 "Simulation of Interface State Generation Effects in LDD MOSFETs," T. Wang, C. Huang, P. Chou, and S. S. Chung, National Chiao-Tung University.
11:30 - 12:30 Lunch
Chairmen: Al Tasch, University of Texas, Austin. and Marius Orlowski, Motorola.
8:45 - 9:10 "Combined Asperity Contact and Fluid Flow Model for Chemical-Mechanical Polishing,"* T. K. Yu, C. Yu, and M. Orlowski, Motorola.
9:10 - 9:35 "Phenomenological Modeling of Plasma Generation for Real-Time Control of RIE Systems,"* M. Chandhok, M. D. Giles, P. D. Hanish, and J. W. Grizzle, University of Michigan.
9:35 - 10:00 "Modeling of Side-Wall Passivation and Ion Saturation Effects on Etching Profiles,"* J. Zheng, and J. P. McVittie, Stanford University.
10:00 - 10:15 Break
10:15 - 10:40 "Modeling of Ti Physical Vapor Deposition Systems,"* D. Bang, J. P. McVittie, M. M. Islamraja, K. C. Saraswat, Z. Krivokapic*, and R. Cheung*, Stanford University, *Advanced Micro Devices.
10:40 - 11:05 "A New Scalar Planewave Model for High NA Lithography Simulations,"* Q. D. Qian, and F. A. Leon, Intel Corporation.
11:05 - 11:30 "Reliable Solid Modeling for Three-Dimensional Semiconductor Process and Device Simulation,"* M. Westermann, N. Strecker, P. Regli, and W. Fichtner, ETH-Zurich.
11:30 - 12:30 Lunch
12:30 - 12:55 "Incorporating Full Band-Structure Effects in the Spherical Harmonics Expansion of the Boltzmann Transport Equation," M. C. Vecchi, D. Ventura, A. Gnudi, and G. Baccarani, University of Bologna.
12:55 - 1:20 "Transient Impact Ionization in Bulk Si," T. Iizuka, and H. Kato, NEC Corporation.
1:20 - 1:45 "Influence of Heat Flux on the Accuracy of Hydrodynamic Models for Ultra-Short Si MOSFETs," I. Bork, Chr. Jungemann, B. Meinerzhagen, and W. L. Engl, University of Aachen.
1:45 - 2:10 "Monte Carlo Modeling of Infrared Multiple-Quantum-Well Phototransistor," V. Ryzhii, and M. Ershov, University of Aizu.
2:10 - 2:35 "A Method of Heterojunction Bipolar Transistor High Frequency Performance Calculation,"G. Khrenov, V. Ryzhii, and S. Kartashov, University of Aizu.
2:35 - 3:00 "Non-Ideal Contacts--Schottky Diode Soft-Breakdown and Hybrid Diode with Contact over pn-junction," D. Schroeder, T. Ostermann, and O. Kalz, TU Hamburg-Harburg.
3:00 - 3:15 Break
3:15 - 3:40 "Architecture and Implementation of 3D Field Support in Semiconductor Wafer Representation," C. Yang, and M. D. Giles, University of Michigan.
3:40 - 4:05 "KYOKO: A New Approach to Couple 2D Process and Device Simulation," M. Stecher, and W. L. Engl, University of Aachen.
4:05 - 4:30 "A Modified Simulated Diffusion Algorithm for Global Optimization of Model Parameters," M. Kim, D. Yoon, S. Cha, J. Jin, S. Lim, and K. Choi, Samsung Electronics.
4:30 - 4:55 "Automatic Proximity Correction for 0.35micron I-line Photolithography, J. Garofalo, K. K. Low, O. Otto, C. Pierrat, P. K. Vasudev, and C. Yuan, AT&T, Sematech, and Trans Vector Tech..
6:00 Reception
Monday, June 6, 1994
Chairmen: K. Taniguchi, Osaka University. and Mark Law, University of Florida.
8:30 - 8:55 "A More Efficient Approach for Monte Carlo Simulation of Deeply-Channeled Implanted Profiles in Single-Crystal Silicon," S.-H. Yang, D. Lim, S. J. Morris, and A. F. Tasch, University of Texas, Austin.
8:55- 9:20 "Atomistic Models of Vacancy-Mediated Dopant Diffusion in Silicon at High Doping Levels,"* S. T. Dunham, and C. D. Wu, Boston University.
9:20 - 9:45 "Non-Fickian Microscopic Diffusion at Interfaces and in Thin Films," M. Orlowski, Motorola.
9:45 - 10:10 "Dynamic Grain-Growth and Static Clustering Effects on Dopant Diffusion in Polysilicon,"* H. Puchner, and S. Selberherr, Technical University of Vienna.
10:10 - 10:30 Break
10:30 - 10:55 "Two Dimensional Simulation of Silicide Growth and Flow," S. Cea, and M. E. Law, University of Florida.
10:55 - 11:20 "Toward the Automatic Synthesis of Process Flows for Semiconductor Devices," R. Yuen, B. Gogoi, and C. H. Mastrangelo, University of Michigan.
11:20 - 12:30 Lunch
8:30 - 8:55 "Optimum Scaling of Non-Symmetric Jacobian Matrices for Threshold Pivoting Preconditioners," C. Fischer, and S. Selberherr, Technical University of Vienna.
8:55- 9:20 "Algorithms for Augmented Device Simulation Models Incorporating IV Continuation and Circuit Element Equations," W. M. Coughran, Jr., R. W. Freund, and R. K. Smith, AT&T Bell Laboratories.
9:20 - 9:45 "Further Improvements in Decoupled Methods for Semiconductor Device Modeling,"* M. S. Obrecht, E. L. Heasell, M. I. Elmasry, K.-C Wu*, and R. W. Dutton*, University of Waterloo, *Stanford University.
9:45- 10:10 "A Galerkin Method for the Arbitrary Order Expansion in Momentum Space of the Boltzmann Equation using Spherical Harmonics," K. Rahmat, J. White, and D. A. Antoniadis, MIT.
10:10 - 10:30 Break
10:30 - 10:55 "Convergence Properties of Relaxation Versus the Surface-Newton Generalized-Conjugate Residual Algorithm for Self-Consistent Electromechanical Analysis of 3-D Micro-Electro-Mechanical Structures," H. Yie, X. Cai, and J. White, MIT.
10:55 - 11:20 "Massively Parallel Device Simulation Using Irregular Grids," J. Sanghavi, E. Tomacruz, and A. Sangiovanni-Vincentelli, University of California, Berkeley.
11:20 - 12:30 Lunch
12:30 - 12:55 "Automatic Discretization and Analytical Jacobian Generation for Device Simulation using a Physical-Model Description Language," J. Litsios, and W. Fichtner, ETH-Zurich.
12:55 - 1:20 "Mesh Adaptation and Flux Discretizations for Dopant Diffusion Modeling," C.-C. Lin, and M. E. Law, University of Florida.
1:20 - 1:45 "Grid Evolution for Oxidation Simulation Using a Quadtree Based Grid Generator," Z. H. Sahul, E. W. McKenna, and R. W. Dutton, Stanford University.
1:45 - 2:10 "A New Approach for 2-D Mesh Generation for Complex Device Structures," G. Garreton, L. Villablanca, N. Strecker, and W. Fichtner, ETH-Zurich.
2:10 - 2:35 "Adaptive Mesh Generation in Three Dimensional Device Simulation," K. Tanaka, H. Kato, P. Ciampolini*, A. Pierantoni*, and G. Baccarani*, NEC Corporation, *University of Bologna.
2:35 - 3:00 "A Triangular Mesh Generation Method Suitable for the Analysis of Complex MOS Device Structures," S. Kumashiro, and I. Yokota, NEC Corporation.
3:00 - 3:15 Break
3:15 - 3:40 "Computer-Aided Trade-off Study of an Integrated Infrared Sensor," J. G. Korvink, R. Lenggenhager, J. Funk, G. Wachutka, and H. Baltes, ETH-Hoenggerberg.
3:40 - 4:05 "Numerical Modelling of Non-ideal Current-Voltage Characteristics of High-Efficiency Silicon Solar Cells," G. Heiser, and A. G. Aberle, University of New South Wales.
4:05 - 4:30 "CMOS-SRAM Soft-Error Simulation System," S. Satoh, R. Sudo, H. Tashiro, N. Higaki, S. Yamaguchi, and N. Nakayama, Fujitsu Laboratories.
4:30 - 4:55 "Polysilicon Gate Depletion Effect on Deep-Submicron Circuit Performance," W. W. Lin, and C. Liang, Intel Corporation.