Lydia L.-C. So received her B.S. degree from University of Illinois at Urbana-Champaign in 1986, and Ph.D. degrees from Cornell University in 1991 in electrical engineering. She joined the Center for Integrated Systems at Stanford University as Postdoctoral Visiting Scholar since January 1992. During her tenure at that capacity, she worked on code development of a dual energy-transport model that includes both carrier and lattice energy balance equations into PISCES-2ET. The program was used to simulate hot carrier effects in deep-submicron devices and lattice heating induced phenomena. Other research activities in which she played an active role include development of energy-dependent impact ionization models for simulation of short-channel silicon MOSFETs; development of energy-dependent mobility model for GaAs which was used to simulate velocity overshoot and Gunn-domain formation in GaAs MESFETs; implementation of an algorithm for coupled circuit (SPICE) and device (PISCES) simulation which provides simulation verification of S-parameter measurements up to 20 GHz for a MESFET test device with parasitic elements included.

Dr. So is a member of IEEE, Tau Beta Pi and Alpha Lambda Delta.

Currently, she is with Xilinx Inc.

Lydia So (so@gloworm.Stanford.EDU)