Robert Y.S. Huang
Robert Y.S. Huang
Robert Y.S. Huang received his B.S. degree in Electrical Engineering with High Honors
from the University of Florida in 1988 and his M.S. degree in
Electrical Engineering from Stanford University in 1990. He is
currently working towards his Ph.D. degree at Stanford in the field of
process modeling. His main interests are in diffusion models and the
interactions between ion implantation and dopant diffusion.
Robert has held summer positions at National Semiconductor in Santa
Clara, CA, and HP Labs in Palo Alto, CA. Robert is also a member of
the IEEE, the Electrochemical Society, Tau Beta Pi, and Eta Kappa Nu.
Here's a description of the work for his dissertation:
Effects of High-Dose Silicon
Implants on Boron Diffusion.
Robert now works for AT&T Bell Labs in Orlando, Florida.