Yi Liu received the B.S. degree in electrical engineering from University of Wisconsin, Madison, Wisconsin, in 1984, and the M.S. degree in electrical engineering from Stanford University in 1986.

His research interests are in the physics, modeling, and fabrication of semiconductor devices. He is currently working on isolation problems of GaAs MESFET such as sidegating effects and substrate leakage currents. This work involves experimental study of the sidegating and leakage current characteristics by electrical measurements, and computer simulations to analyze and understand the underlying physical mechanisms such as the effects of the deep-level traps, negative-differential-mobility of electrons in GaAs, and metal contact on substrates.

He is a member of Tau Beta Pi Engineering Honor Society, Sigma Pi Sigma Physics Honor Society, and Sigma Xi Scientific Research Society. He graduated with honor from University of Wisconsin in 1984.

Yi Liu (liuyi@gloworm.Stanford.EDU)
AEL 231
Integrated Circuits Laboratory
Stanford University
Stanford, CA 94305-4055