SISPAD 2000--Call for Papers

CALL FOR PAPERS

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES: SISPAD 2000

September 6-8, 2000 • Sheraton Seattle Hotel and Towers • Seattle • WA • USA

Workshop Chairperson
John Faricelli
Compaq
Technical Program Committee Chairperson
Paco Leon
Intel Corporation
Technical Subcommittee Chairpersons:

Processes and Equipment
Scott Dunham
University of Washington
Devices
Neil Goldsman
University of Maryland

Applications
Michael Duane
Advanced Micro Devices
Numerics/Interconnects
Khalid Rahmat
IBM

Under the sponsorship of the Electron Devices Society of the IEEE, an international conference on the numerical modeling of semiconductor equipment, processes, and devices for integrated circuits will be held in Seattle on September 6-8, 2000.
This meeting provides an opportunity for the presentation and discussion of recent advances in modeling and simulation of semiconductor devices, processes and equipment for increased understanding and for applications to both design and manufacturing. The program consist of 20-minute presentations selected from two-page abstracts. Topics may include all aspects of device simulation, including models of VLSI device scaling limits, quantum effects, and novel devices; process simulation, including both continuum and atomistic approaches; equipment, topography, and lithography simulation; interconnect modeling and algorithms; integration of process, device, and circuit simulations; simulation of chemical and physical phenomena, including the determination of model parameters and material properties; user interfaces and visualization; numerical methods and algorithms, including gridding and parallel computing; simulations of such devices as microsensors, microactuators, optoelectronics devices, lasers, and flat panel displays; and benchmarking, calibration, and verification of simulators.

Deadline for submission of abstracts: March 3, 2000
Authors should submit 26 copies of a two-page abstract including figures to:
SISPAD 2000 Conference Manager CISX 332 Stanford University Stanford, CA 94305-4075 Email: fely@gloworm.stanford.edu Phone: (650)723-1349; Fax:(650)725-7731

The abstract should include: (1)title, (2)first author's name and complete mailing address, (3)names and affiliations of additional authors, and (4)electronic mailing address. The Technical Program Committee will consist of four Subcommittees on 1)Processes and Equipment, 2)Devices, 3)Applications, and 4)Numerics/Interconnects. Authors may suggest for which Subcommittee their abstract is most suitable. Authors will be notified of the Technical Program Committee's decision by May 12, 2000.
Depending on the number of accepted papers, one or more poster sessions may be arranged.
Authors of accepted papers will be instructed on how to prepare a final extended abstract for inclusion in the 2000 SISPAD Proceedings.
Selection Criteria: The degree to which the two-page abstract deals with the following criteria will strongly affect whether the paper is selected: 1) What is the motivation for your paper? 2) What is new or original and how does it differ from previous work? 3) What is its impact or significance? 4) What are the major and specific results?
More information about SISPAD 2000 can be found at: www-tcad.stanford.edu/sispad2000.html.

	2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES: SISPAD 2000 September 6-8, 2000 • Sheraton Seattle Hotel and Towers • Seattle • WA • USA
Workshop Chairperson John Faricelli Compaq Technical Program Committee Chairperson Paco Leon Intel Corporation Technical Subcommittee Chairpersons: Processes and Equipment Scott Dunham University of Washington Devices Neil Goldsman University of Maryland Applications Michael Duane Advanced Micro Devices Numerics/Interconnects Khalid Rahmat IBM	Under the sponsorship of the Electron Devices Society of the IEEE, an international conference on the numerical modeling of semiconductor equipment, processes, and devices for integrated circuits will be held in Seattle on September 6-8, 2000. This meeting provides an opportunity for the presentation and discussion of recent advances in modeling and simulation of semiconductor devices, processes and equipment for increased understanding and for applications to both design and manufacturing. The program consist of 20-minute presentations selected from two-page abstracts. Topics may include all aspects of device simulation, including models of VLSI device scaling limits, quantum effects, and novel devices; process simulation, including both continuum and atomistic approaches; equipment, topography, and lithography simulation; interconnect modeling and algorithms; integration of process, device, and circuit simulations; simulation of chemical and physical phenomena, including the determination of model parameters and material properties; user interfaces and visualization; numerical methods and algorithms, including gridding and parallel computing; simulations of such devices as microsensors, microactuators, optoelectronics devices, lasers, and flat panel displays; and benchmarking, calibration, and verification of simulators. Deadline for submission of abstracts: March 3, 2000 Authors should submit 26 copies of a two-page abstract including figures to: SISPAD 2000 Conference Manager CISX 332 Stanford University Stanford, CA 94305-4075 Email: fely@gloworm.stanford.edu Phone: (650)723-1349; Fax:(650)725-7731 The abstract should include: (1)title, (2)first author's name and complete mailing address, (3)names and affiliations of additional authors, and (4)electronic mailing address. The Technical Program Committee will consist of four Subcommittees on 1)Processes and Equipment, 2)Devices, 3)Applications, and 4)Numerics/Interconnects. Authors may suggest for which Subcommittee their abstract is most suitable. Authors will be notified of the Technical Program Committee's decision by May 12, 2000. Depending on the number of accepted papers, one or more poster sessions may be arranged. Authors of accepted papers will be instructed on how to prepare a final extended abstract for inclusion in the 2000 SISPAD Proceedings. Selection Criteria: The degree to which the two-page abstract deals with the following criteria will strongly affect whether the paper is selected: 1) What is the motivation for your paper? 2) What is new or original and how does it differ from previous work? 3) What is its impact or significance? 4) What are the major and specific results? More information about SISPAD 2000 can be found at: www-tcad.stanford.edu/sispad2000.html.

fely@gloworm.stanford.edu