2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES: SISPAD 2000
Technical Program Committee Chairperson
Technical Subcommittee Chairpersons:
Processes and Equipment
Under the sponsorship of the Electron Devices Society of the IEEE, an international conference on the numerical modeling of semiconductor equipment, processes, and devices for integrated circuits will be held in Seattle on September 6-8, 2000.
This meeting provides an opportunity for the presentation and
discussion of recent advances in modeling and simulation of
semiconductor devices, processes and equipment for increased
understanding and for applications to both design and
manufacturing. The program consist of 20-minute presentations selected
from two-page abstracts. Topics may include all aspects of device
simulation, including models of VLSI device scaling limits, quantum
effects, and novel devices; process simulation, including both
continuum and atomistic approaches; equipment, topography, and
lithography simulation; interconnect modeling and algorithms;
integration of process, device, and circuit simulations; simulation of
chemical and physical phenomena, including the determination of model
parameters and material properties; user interfaces and visualization;
numerical methods and algorithms, including gridding and parallel
computing; simulations of such devices as microsensors,
microactuators, optoelectronics devices, lasers, and flat panel
displays; and benchmarking, calibration, and verification of
Deadline for submission of abstracts: March 3, 2000
Authors should submit 26 copies of a two-page abstract including figures to:
SISPAD 2000 Conference Manager CISX 332 Stanford University Stanford, CA 94305-4075 Email: email@example.com Phone: (650)723-1349; Fax:(650)725-7731
The abstract should include: (1)title, (2)first author's name and complete mailing address, (3)names and affiliations of additional authors, and (4)electronic mailing address. The Technical Program Committee will consist of four Subcommittees on 1)Processes and Equipment, 2)Devices, 3)Applications, and 4)Numerics/Interconnects. Authors may suggest for which Subcommittee their abstract is most suitable. Authors will be notified of the Technical Program Committee's decision by May 12, 2000.
Depending on the number of accepted papers, one or more poster sessions may be arranged.
Authors of accepted papers will be instructed on how to prepare a final extended abstract for inclusion in the 2000 SISPAD Proceedings.
Selection Criteria: The degree to which the two-page abstract deals with the following criteria will strongly affect whether the paper is selected: 1) What is the motivation for your paper? 2) What is new or original and how does it differ from previous work? 3) What is its impact or significance? 4) What are the major and specific results?
More information about SISPAD 2000 can be found at: www-tcad.stanford.edu/sispad2000.html.