The 2000 International Conference on simulation of Semiconductor Processes and Devices (SISPAD '00) will be held on September 6-8, 2000 at Sheraton Seattle Hotel and Towers, Seattle, Washington.

Program for: Thursday, September7, 2000, Poster Session
             Friday, September 8, 2000

Tuesday, September 5, 6:00 - 8:00pm
Wednesday, September 6, 7:30am - 2:00pm

Wednesday, September 6
8:15 - 8:20 Opening Remarks, John Faricelli
8:20 - 8:30 Presenting IEEE EDS Special Award to: Don Scharfetter for "seminal contribution to the computer modeling of power semiconductor devices"


8:30 - 9:15
"Essential Physics of Carrier Transport in Nanoscale MOSFETs"
Mark Lundstrom, Purdue University
9:15 - 10:00
"The State of the Art in Interconnect Simulation"
Siegfried Selberherr, Technische Universitaet Wien
Break (30 minutes)

10:30 - 11:15
"Predictive Technology Characterization, Missing Links Between TCAD and Compact Modeling"
Colin C. McAndrews, Motorola
11:15 - 12:00
"First-Principles-Based Predictive Simulations of B Diffusion and Activation in Ion Implanted Si"
Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory

Session 1 - Devices: Monte Carlo Simulation

1:40 - 2:05

"MOSFET Modeling Into the Ballistic Regime"
J.D. Bude,
Bell Laboratories, Lucent Technologies, Murray Hill, NJ
2:05 - 2:30
"Efficient Monte Carlo Device Simulation with Automatic Error Control"
F.M. Bufler, A. Schenk, and W. Fichtner,
ETH Zürich, Zürich, Switzerland
2:30 - 2:55
"A Fast Three-Dimensional MC Simulator for Tunneling Diodes"
M. Wagner, H. Mizuta, and K. Nakazato,
Hitachi Europe Ltd., Cambridge, United Kingdom
Break (15 minutes)
3:10 - 3:35
"Simulation of Hot Hole Currents in Ultra-thin Silicon Dioxides: The Relationship Between Time to Breakdown and Hot Hole Currents"
T. Ezaki, H. Nakasato, T. Yamamoto, and M. Hane,
NEC Corporation, Sagamihara, Japan
3:35 - 4:00
"Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors"
P. Palestri, L. Selmi, M. Pavesi*, F. Widdershoven**, and E. Sangiorgi.
DIEGM, Udine, Italy, *Dept. of Physics and INFM, Parma, Italy and **Philips Research Laboratories, Eindhoven, The Netherlands
4:00 - 4:25
"Spatial Analysis of the Electron Transit Time in a Silicon/Germanium Heterojunction Bipolar Transfer by Drift-Diffusion, Hydrodynamic, and Full-Band Monte Carlo Simulation"
C. Jungemann, B. Neinhüs, and B. Meinerzhagen,
Universität Bremen, Bremen, Germany
4:25 - 4:50
"A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents"
P. Palestri, L. Selmi, F. Hurkx*, and J. Slotboom*,
DIEGM, Udine, Italy and *Philips Research Nat Lab. Eindhoven, The Netherlands
6:00 - 10:00pm Dinner at the Tillicum Village