Abramo, Antonio (DEIS - University of Bologna)
#1026 "A general purpose 2D Schrodinger solver with open/closed boundary conditions for quantum device analysis"
Akazawa, Masamichi (Hokkaido University)
#1036 "Computer-Aided Design of Single-electron Boltzmann Machin Neuron Circuit"
Albasha, Lutfi (University of Leeds)
Poster:#1030 "Breakdown Characterisation of HEMTs and MESFETs Based on A New Thermally Driven Gate Model"
Aluru, Narayan (MIT)
#1053 "A Multi-level Newton Method for Static and Fundamental Frequency Analysis of Electro-Mechanical Systems"
Ancona, Mario G. (Naval Research Laboratory)
#1081 "Density-Gradient Simulations of Quantum Effects in Ultra-Thin-Oxide MOS Structures"
Bar, Eberhard (Universitat Erlangen-Nurnberg)
Poster:#1071 "Three-Dimensional Simulation of Conventional and Collimated Sputter Deposition of Ti Layers into High Aspect Ratio Contact Holes"
Biesemans, Serge (ASP Division, IMEC)
#1085 "On the effective mobility for electrons in MOS inversion channels"
Biesemans, Serge (ASP Division, IMEC)
Poster:#1086 "Assessment of a MOSFET circuit model as a tool for device design down to 0.05 um"
Chang, C.-H. (University of Maryland)
#1054 "The Spherical Harmonic Method: Corroboration with Monte Carlo and Experiment"
Chaudhry, Samir (Lucent Technologies, Inc.)
Poster:#1014 "A Computationaly Efficient Technique to Extract Diffused Profiles and Three Dimensional Collector Resistances of High Energy Implanted Bipolar Devices"
Chen, Kai (UC Berkeley)
Poster:#1015 "Accurate Models for CMOS Scaling and Gate Delay in Deep Submicron Regime"
Chen, Vincent M.C. (Advanced Micro Devices)
Poster:#1093 "Integrated Statistical Process and Device Simulation System with Automatic Calibration using Single-Step Feedback and Backpropagation Neural Network"
Cheng, Yuhua (UC Berkeley)
#1006 "ICM--An Analytical Inversion Charge Model for Accurate Modeling of Thin Gate Oxide MOSFETs"
Cheng, Yuhua (UC Berkeley)
Poster:#1007 "Modeling Reverse Short Channel and Narrow Width Effects in Small Size MOSFET's for Circuit Simulation"
Choi, Chang-Hoon (CAE, Samsung Electronics Co., Ltd.)
#1038 "Analysis of Channel-Width Effects in 0.3um Ultra-Thin SOI NMOSFETs"
David Adalsteinsson, J.A. Sethian (UC Berkeley)
#1056 "Three-Dimensional Profile Evolution under Low Sticking Coefficient"
Edwin T. Carlen, Carlos H. Mastrangelo (University of Michigan)
#1060 "An n Experimental Methodology for the Estimation of Spatially Correlated Parametric Yield in Thin Film Devices"
Eikyu, Katsumi (Mitsubishi Electric Corporation)
Poster:#1003 "2-Dimensional Simulation of FN Current Suppression Including Phonon Assisted Tunnelling Model in Silicon Dioxide"
Enda, Toshiyuki (Toshiba Corporation)
Poster:#1097 "Grid size independent model of inversion layer carrier mobility"
Freund, Roland W. (Lucent Technologies)
#1046 "The SyMPVL Algorithm and Its Applications to Interconnect Simulation"
Gencer, Alp H. (Boston University)
#1121 "Physical Modeling of Transient Enhanced Diffusion and Dopant Deactivation via Extended Defect Evolution"
Gluck, M. ( )
#1137, "2D Process and Device Simulation of Lateral and Vertical Si/SiGe High-Speed Devices"
P. Graf, B. Meinerzhagen (University of Bremen)
#1088 "Evaluation of Solenoidal and Statistically Enhanced Total Current De
nsities in Multi-Particle Monte Carlo Device Simulators"
Hane, Masami (NEC Corporation, Microelectronics Res. Lab.)
#1027 "Simulation of Secondary Ion Mass Spectrometry (SIMS) for Steep Dopant Distribution Profiling"
Hobler, Gerhard (Lucent Technologies)
#1124 "A Model of {311} Defect Evolution Based on Nucleation Theory"
Huang, Shih-Fen (Stanford University)
#1032 "Modeling Stress Effects on Thin Oxides Growth Kinetics"
Iverson, R.B. (Rensselaer Polytechnic Institute)
#1021 "A Methodology for Full-Chip Extraction of Interconnect Capacitance Using Monte Carlo Based Field Solvers"
Jaehee Lee, Taeyoung Won (Inha University, School of Elect. & Computer Engineering)
Poster:#1082 "Three-dimensional Modeling of the TED due to Implantation Damage"
Jiong Guang Su, Shyh-Chyi Wong (Feng-Chia University)
#1067 "Tilt Angle Effect on Optimizing HALO PMOS Performance"
Jones, S. K. (GEC-Marconi MAterials Technology Ltd.)
#1130 "Simulation of Advanced-LOCOS Capability for Sub-0.25µm CMOS Isolation"
Jungemann, C.
#1100 "Convergence Estimation for Stationary Ensemble Monte Carlo Simulations"
Kakoschke, R. (HL PI M, Siemens AG)
#1118 "Concurrent Technology, Device, and Circuit Development for EEPROMs"
Kan, Edwin C. (Stanford University)
Poster:#1112 "Gridding Techniques for the Level Set Method in Semiconductor Process and Device Simulation"
Kim, Sangku (LG Semicon Co., Ltd.)
#1103 "Explanation of Anamalous Narrow Width Effect for nMOSFET with LOCOS/NSL Isolation by Compressive Stress"
Kim, Yoo-Hyon (CAE, Samsung Electronics Co., Ltd.)
#1040 "CMP Profile Simulation Using an Elastic Model Based on Nonlinear Contact Analysis"
Kosina, Hans (Institute for Microelectronics, TU Vienna)
#1116 "A New Approach to Ionized-Impurity Scattering"
Lades, M. (TU of Munich)
#1061 "Extended Anisotropic Mobility Model Applied to 4H/6H-SiC Devices"
Law, Mark E. (University of Florida)
#1080 "Improved Local Refinement Algorithms for Adaptive Meshing of Process Simulation Problems"
Le Carval, Gilles (LETI-DMEL)
#1043 "Methodology for Predictive Calibration of TCAD Simulators"
Li, Xiaolei (Carnegie Mellon University)
Poster:#1125 "Rigorous Topography Simulation of Contamination to Defect Transformation"
Lim, Shiang Liang (Stanford University)
#1123 "A Computationally-Stable Quasi-Empirical Compact Model for the Simulation of MOS Breakdwon in ESD-Protection Circuit Design"
Logan, Ron (IBM Semiconductor Research & Dev. Center)
#1050 "Asymmetry in effective-channel length of n- and p-MOSFETs"
Machala, Chuck (Texas Instruments)
#1013 "The Role of Boron Segregation and Transient Enhanced Diffusion on Reverse Short Channel Effects"
Matsuzawa, K. (Toshiba Corporation)
#1083 "Modeling of saturation velocity for simulation of deep submicron nMOSFETs"
Milor, Linda (Advanced Micro Devices)
#1092 "Photoresist Process Optimization for Defects Using a Rigorous Topography Simulator"
Moroz, Victor (Technology Modeling Associates)
Poster:#1057 "A Boundary Conforming Mesh Generation Algorithm for Simulation of Devices with Complex Geometry"
Navi, Mitra (Boston University)
Poster:#1122 "Interactions of Fluorine Redistribution and Nitrogen Incorporation with Boron Diffusion in Silicon Dioxide"
Ohno, Yasuo (NEC Corporation)
Poster:#1096 "Two-dimensional Device Simulator for Cyclic Bias Application"
Oldiges, Phil (Digital Equipment Corporation)
Poster:#1004 "Molecular Dynamics Simulations of LATID Implants into Silicon"
Park, Heemyong (Motorola, Inc.)
Poster:#1028 "Systematic Calibration of Process Simulators for Predictive TCAD"
Park, Jin-Kyu (CAE, Samsung Electronics Co., Ltd.)
#1041 "A Characterization Tool for Current Degradation Effects of Abnormally Structured MOS Transistors"
Park, Jinsung (CAE, Samsung Electronics Co., Ltd.)
Poster:#1037 "Modeling of Polymer Neck Generation and Its Effects on the Etch Profile in Oxide Contact Hole Etching Using Ar, CHF3, and CF4 Gases"
Pierantoni, Anna (Universita di Bologna)
#1023 "Sub-Domain Solution of the Boltzmann Equation in MOSDevices by Means of Spherical Harmonics Expansion"
Radi, M. (Institute for Microelectronics)
Poster:#1114 "AMIGOS: Analytical Model Interface & General Object-Oriented Solver"
Rao, Vinay S. (Stanford University)
#1044 "A New Numerical Formulation for Thermal Oxidation"
Romanowics, B. (Swiss Federal Inst. of Technology Lausanne)
#1066 "Capacitive detection method evaluation for silicon accelerometer by physical parameter extraction from finite elements simulations"
Rotella, Francis (Stanford University)
#1110 "Harmonic Balance Device Analysis of an LDMOS RF Power Amplifier with Parasitics and Matching Network"
Rucker, Holger (Institute for Semiconductor Physics)
Poster:#1031 "Modeling the Effect of Carbon on Boron Diffusion"
Rueda, Hernan A. (University of Florida)
#1127 "Mechanical Stress Modeling for Silicon Fabrication Processes"
S. Tian, Al F. Tasch (University of Texas at Austin)
Poster:#1090 "A Computationally Efficient Ion Implantation Damage Model and Its Application to Multiple Implant Simulations"
Sakamoto, Hironori (NEC Corporation)
#1073 "A New Diffusion Algorithm during Oxidation which can Handle Both Phosphorous Pile-Up and B Segregation at Si-SiO2 Interface"
Sakamoto, Hironori (NEC Corporation)
#1074 "Simulation of Reverse Short Channel Effects with a Consistent Point-Defect Diffusion Model"
Sangiorgi, Enrico (University of Udine)
#1133 "Historical perspective and recent developments of hot-carrier generation modeling for device analysis"
Sano, Nobuyuki (University of Tsukuba)
#1099 "Substrate Current Fluctuation under Low Drain Voltages in Si-MOSFET's"
Schrom, G. (Institute for Microelectronics)
#1113 "VLSI Performance Metric Based on Minimum TCAD Simulations"
Simlinger, T. (Institute for Microelectronics, TU Vienna)
#1111 "A Method for Unified Treatment of Interface Conditions Suitable for Device Simulation"
Stolk, Peter A. (Philips Research Laboratories)
#1025 "Device Modeling of Statistical Dopant Fluctuations in MOS Transistors"
Swecker, Aaron L. (Carnegie Mellon University)
#1105 "Simulation of Defect Detection Schemes for Wafer Inspection in VLSI Manufacturing"
Tang, Ting-Wei (University of Massachusetts)
Poster:#1020 "A Simplified Hydrodynamic Impact Ionization Model Based on the Average Energy of Hot Electron Subpopulation"
Tatsumi, Takaaki (Sony Corporation)
Poster:#1018 "MOSQue: A Novel TCAD Database System with Efficient Handling Capability on Measured and Simulated Data"
Tosaka, Yoshiharu (Fujitsu Laboratories, Ltd.)
Poster:#1012 "Neutron-Induced Soft Error Simulator and Its Accurate Predictions"
Troger, C. (TU Vienna)
Poster:#1109 "Modeling Nonparabolicity Effects in Silicon Inversion Layers"
Tung, Thye-Lai (Intel Corporation)
#1045 "A Method for Die-Scale Simulation of CMP Planarization"
Vasanth, Karthik (Texas Instruments, Inc.)
#1078 "A Pocket Implant Model for sub 0.18 micron CMOS Process Flows"
Venturi, Franco (University of Parma)
Poster:#1126 "Assessment of Accuracy Limitations of Full Band Monte Carlo Device Simulation"
Vuong, Hong-Ha (Lucent Technologies)
#1107 "Modeling the effect of Phosphorous dose loss at the SiO2 interface on CMOS device characteristics"
Wang, J. (MIT)
#1106 "Fast Algorithms for Computing Electrostatic Geometric Sensitivities"
Wettstein, A. (Integrated Systems Laboratory)
#1108 "The Influence of Localized States on Gate Tunnel Currents -- Modeling and Simulation"
Y.S. Wang, C.H. Mastrangelo (University of Michigan)
#1049 "A Multiple Zone Inverse Diffusion Solver for Silicon Processing"
Yim, Daebin (LG Semicon Co., Ltd.)
#1102 "Layout optimization of ESD protection TFO-NMOS by Two-dimensional Device Simulation"