News

• Lentz mobility model for surface acoustic phonon and surface roughness effects. Should be used together with the Klaassen bulk model in place of the "sgs" model whenever MOS surface concentrations are greater than 1.0e17/cm**3, or when gate fields are greater than 1.0e5 V/cm.

  To activate the Lentz/Klaassen mobility model include the following lines in your PADRE input deck:

    models   temp=300 conmob ccmob gatmob
    material name=silicon in.model=klaassen ip.model=klaassen
    +        cn.model=klaassen cp.model=klaassen
    +        gn.model=lentz gp.model=lentz
  

• Added flexibility in modeling band-gap narrowing (BGN). The conventional form for BGN models assumes an equal amount of narrowing in both the conduction and valence bands. PADRE now allows different conduction and valence band narrowing by specifying separate models or coefficients on the appropriate "material" command line.

  The vector parameters "n.bgn" and "p.bgn" replace the scalars "n.bgn", "e.bgn" and "a.bgn" in earlier versions corresponding to the concentration N, energy E and dimensionless constant A in the Slotboom formulation. At the moment, there are two BGN models implemented, "slotboom" and "cak", an experimental model for SiGe. The following example uses the Slotboom model:

    material name=silicon bgnn.mod=slotboom bgnp.mod=slotboom
    +        n.bgn=1e17,9e-3,0.5 p.bgn=1e17,5e-3,0.4
  

• To obtain AVS output, use the plot.3d command to save results into a "scatter" file, and then use the scat2avs utility to convert this file to AVS format. Some vector quantities, including current vectors (j.*) and velocity vectors (v.*) are not yet available in the plot.3d command.